STMicroelectronics_STH6N95K5-2

STMicroelectronics
STH6N95K5-2  
Single FETs, MOSFETs

STMicroelectronics
STH6N95K5-2
278-STH6N95K5-2
Ersa
STMicroelectronics-STH6N95K5-2-datasheets-12088027.pdf
MOSFET N-CH 950V 6A H2PAK-2
In Stock : 1005

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STH6N95K5-2 Description

The STH6N95K5-2 is a high voltage, high current N-channel MOSFET manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and battery management systems.

Description:

The STH6N95K5-2 is a high voltage, high current N-channel MOSFET with a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 95A. It features a low on-state resistance (Rds(on)) of 0.05 ohms maximum, which helps to minimize power dissipation and improve efficiency in power electronic applications.

Features:

  • High voltage and current ratings: The STH6N95K5-2 is designed to handle high voltage and current loads, making it suitable for use in a variety of power electronic applications.
  • Low on-state resistance: The low Rds(on) of the STH6N95K5-2 helps to minimize power dissipation and improve efficiency in power electronic applications.
  • High switching speed: The STH6N95K5-2 has a fast switching speed, which helps to reduce switching losses and improve overall system performance.
  • Integrated body diode: The STH6N95K5-2 features an integrated body diode, which provides efficient bidirectional current flow during switching.

Applications:

The STH6N95K5-2 is suitable for use in a variety of power electronic applications, including:

  1. Motor control: The high voltage and current ratings of the STH6N95K5-2 make it ideal for use in motor control applications, such as in industrial automation and robotics.
  2. Power supplies: The STH6N95K5-2 can be used in power supply applications, such as in power factor correction circuits and DC-DC converters.
  3. Battery management systems: The STH6N95K5-2 can be used in battery management systems, such as in electric vehicles and energy storage systems, to control the flow of current between the battery and the load.
  4. Inverters: The STH6N95K5-2 can be used in inverter applications, such as in solar power systems and uninterruptible power supplies (UPS), to convert DC power to AC power.

Overall, the STH6N95K5-2 is a high performance MOSFET that offers high voltage and current ratings, low on-state resistance, and fast switching speed, making it suitable for use in a variety of power electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STH6N95K5-2 Documents

Download datasheets and manufacturer documentation for STH6N95K5-2

Ersa STH6N95K5-2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STH6N95K5-2      

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