STMicroelectronics_STF13N60M2

STMicroelectronics
STF13N60M2  
Single FETs, MOSFETs

STMicroelectronics
STF13N60M2
278-STF13N60M2
Ersa
STMicroelectronics-STF13N60M2-datasheets-8104457.pdf
N-channel 600 V, 350 Ohm typ., 1
In Stock : 1199

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $0.61769
    • $0.62
    • 10+
    • $0.50342
    • $5.03
    • 50+
    • $0.44546
    • $22.27
    • 100+
    • $0.38916
    • $38.92
    • 500+
    • $0.35604
    • $178.02
    • 1200+
    • $0.33782
    • $405.38
    ADD TO CART
    QUICK ORDER
    $0.61769    $0.62
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STF13N60M2 Description

    STF13N60M2 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in high voltage applications, such as power electronics and motor control.

    Description:

    The STF13N60M2 is a N-channel enhancement mode field effect transistor (MOSFET). It has a maximum drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 13A, and a gate-source voltage (VGS) of ±20V. The device is available in a TO-220 package.

    Features:

    • High voltage operation: The STF13N60M2 can operate at voltages up to 600V, making it suitable for high voltage applications.
    • High current capability: The device can handle continuous drain currents up to 13A, making it suitable for applications that require high current handling.
    • Low gate charge: The STF13N60M2 has a low gate charge, which reduces switching losses and improves efficiency.
    • High temperature operation: The device is rated for operation over a wide temperature range of -65°C to +175°C.

    Applications:

    The STF13N60M2 is commonly used in a variety of high voltage applications, including:

    • Power electronics: The device can be used in power electronics circuits, such as DC-DC converters and motor controllers.
    • Motor control: The STF13N60M2 can be used in motor control applications, such as brushless DC motor controllers and stepper motor drivers.
    • Industrial control: The device can be used in industrial control applications, such as inverter duty circuits and power supplies.
    • Automotive: The STF13N60M2 can be used in automotive applications, such as electric power steering systems and battery management systems.

    Overall, the STF13N60M2 is a versatile and high-performance MOSFET transistor that is well-suited for a wide range of high voltage applications. Its high voltage and current handling capabilities, low gate charge, and high temperature operation make it a popular choice for power electronics and motor control applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF13N60M2 Documents

    Download datasheets and manufacturer documentation for STF13N60M2

    Ersa STF(I)13N60M2      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STF(I)13N60M2      
    Ersa Marking Layout 10/May/2023      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service