STMicroelectronics_STW13N60M2

STMicroelectronics
STW13N60M2  
Single FETs, MOSFETs

STMicroelectronics
STW13N60M2
278-STW13N60M2
Ersa
STMicroelectronics-STW13N60M2-datasheets-5655644.pdf
MOSFET N-CH 600V 11A TO247
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STW13N60M2 Description

STW13N60M2 Description

The STW13N60M2 from STMicroelectronics is a 600V N-channel MOSFET belonging to the MDmesh™ II Plus series, designed for high-efficiency power switching applications. With a continuous drain current (Id) rating of 11A (Tc) and a low on-resistance (Rds(on)) of 380mΩ @ 5.5A, 10V, this device ensures minimal conduction losses. Its input capacitance (Ciss) of 580pF @ 100V and gate charge (Qg) of 17nC @ 10V contribute to fast switching performance, making it suitable for high-frequency operations. Although marked as obsolete, it remains a robust choice for legacy designs requiring high-voltage handling and thermal stability (rated for 110W power dissipation).

STW13N60M2 Features

  • High Voltage Rating: 600V Vdss for industrial and automotive applications.
  • Low Rds(on): 380mΩ @ 10V Vgs reduces power dissipation and improves efficiency.
  • Fast Switching: Optimized gate charge (17nC) and input capacitance (580pF) for reduced switching losses.
  • Thermal Performance: 110W (Tc) power dissipation ensures reliability in high-temperature environments.
  • Robust Construction: TO-247 package enhances heat dissipation and mechanical durability.
  • Compliance: RoHS3 compliant and REACH unaffected, meeting environmental standards.

STW13N60M2 Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives: Inverters and H-bridge configurations for industrial motors.
  • Lighting Systems: Ballasts and LED drivers requiring efficient switching.
  • Renewable Energy: Solar inverters and wind power systems.
  • Automotive: Auxiliary power systems and charging infrastructure.

Conclusion of STW13N60M2

The STW13N60M2 excels in high-voltage, high-efficiency applications, leveraging MDmesh™ II Plus technology for low conduction and switching losses. While obsolete, its 600V rating, low Rds(on), and TO-247 thermal performance make it a viable option for legacy or cost-sensitive designs in power electronics, industrial systems, and renewable energy. Engineers should evaluate alternative modern equivalents for new designs but can rely on this MOSFET for proven reliability in demanding environments.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STW13N60M2 Documents

Download datasheets and manufacturer documentation for STW13N60M2

Ersa STx13N60M2      
Ersa Mult Dev OBS 3/Jul/2020      
Ersa STx13N60M2      

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