The STW13N60M2 from STMicroelectronics is a 600V N-channel MOSFET belonging to the MDmesh™ II Plus series, designed for high-efficiency power switching applications. With a continuous drain current (Id) rating of 11A (Tc) and a low on-resistance (Rds(on)) of 380mΩ @ 5.5A, 10V, this device ensures minimal conduction losses. Its input capacitance (Ciss) of 580pF @ 100V and gate charge (Qg) of 17nC @ 10V contribute to fast switching performance, making it suitable for high-frequency operations. Although marked as obsolete, it remains a robust choice for legacy designs requiring high-voltage handling and thermal stability (rated for 110W power dissipation).
The STW13N60M2 excels in high-voltage, high-efficiency applications, leveraging MDmesh™ II Plus technology for low conduction and switching losses. While obsolete, its 600V rating, low Rds(on), and TO-247 thermal performance make it a viable option for legacy or cost-sensitive designs in power electronics, industrial systems, and renewable energy. Engineers should evaluate alternative modern equivalents for new designs but can rely on this MOSFET for proven reliability in demanding environments.
Download datasheets and manufacturer documentation for STW13N60M2