STMicroelectronics

STB18N60M2  

Single FETs, MOSFETs

STB18N60M2 Description

The STB18N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 13A at 25°C, this device is well-suited for power electronics applications. The STB18N60M2 is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability.

STB18N60M2 Features

• 600V Drain-to-Source Voltage (Vdss): Provides robust voltage handling capabilities for demanding power electronics applications.
• 13A Continuous Drain Current (Id) @ 25°C: Offers high current handling, enabling efficient power delivery in various applications.
• Low Rds On (Max) of 280mOhm @ 6.5A, 10V: Minimizes power losses and improves efficiency in high-current applications.
• 4V Vgs(th) (Max) @ Id: Ensures reliable switching performance and easy integration into existing designs.
• D2PAK Surface Mount Package: Facilitates easy integration into compact and space-constrained designs.
• REACH Unaffected and ROHS3 Compliant: Meets stringent environmental regulations, ensuring sustainability and compliance.
• Moisture Sensitivity Level (MSL) 1 (Unlimited): Allows for flexible handling and storage without compromising device performance.

STB18N60M2 Applications

The STB18N60M2 is ideal for a wide range of applications where high voltage and current handling are required. Some specific use cases include:

1. Power Supplies: Due to its high voltage and current ratings, the STB18N60M2 is well-suited for power supply designs, particularly in industrial and automotive applications.
2. Motor Drives: The device's low Rds On and high current capabilities make it an excellent choice for motor drive applications, providing efficient power delivery and control.
3. Inverters: The STB18N60M2's high voltage and current ratings, combined with its low Rds On, make it ideal for inverter applications, where high efficiency and reliability are critical.
4. Industrial Controls: The device's robust performance characteristics make it suitable for various industrial control applications, such as motor control and power distribution.

Conclusion of STB18N60M2

The STB18N60M2 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current handling capabilities, low Rds On, and robust performance make it an excellent choice for power supplies, motor drives, inverters, and industrial controls. With its REACH unaffected and ROHS3 compliant status, the STB18N60M2 not only delivers high performance but also meets stringent environmental regulations, making it a reliable and sustainable choice for your next power electronics design.

STB18N60M2 Documents

Download datasheets and manufacturer documentation for STB18N60M2

Datasheets :

ST(B, P, W)18N60M2      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

ST(B, P, W)18N60M2      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013