


STMicroelectronics
STFI13N60M2
278-STFI13N60M2
PDF Datasheet
600V 11A N-Channel MOSFET, 380mR Rds(on), TO-251FP
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Responsible qualityTech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
10.8mm
STFI13N60M2 Description
N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole TO-281 (I2PAKFP)
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