STMicroelectronics
STW70N60M2
Single FETs, MOSFETs
STW70N60M2
278-STW70N60M2
STMicroelectronics-STW70N60M2-datasheets-11843846.pdf
MOSFET N-CH 600V 68A TO247
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STW70N60M2 Description
The STW70N60M2 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.
Description:
The STW70N60M2 is a N-channel enhancement mode MOSFET with a voltage rating of 600V and a continuous drain current of 70A. It features a low on-state resistance (RDS(on)) of 0.068 ohms (maximum) at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.
Features:
- High voltage rating: The STW70N60M2 is designed to operate at voltages up to 600V, making it suitable for high-power applications.
- High current capability: With a continuous drain current of 70A, the STW70N60M2 can handle significant current loads.
- Low on-state resistance: The low RDS(on) of the STW70N60M2 helps to minimize power dissipation and improve efficiency in power electronic applications.
- Robustness: The MOSFET features a rugged construction with an integrated protection against overvoltage, overcurrent, and thermal overload.
- Avalanche energy rating: The STW70N60M2 can withstand high energy pulses during avalanche conditions, making it suitable for applications with high inrush currents or transient voltages.
Applications:
- Motor control: The STW70N60M2 can be used in motor control applications, such as in industrial automation, robotics, and HVAC systems.
- Power supplies: The MOSFET is suitable for use in power supply applications, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
- Automotive systems: The STW70N60M2 can be used in various automotive applications, such as electric power steering, air conditioning systems, and battery management systems.
- Renewable energy systems: The MOSFET can be utilized in renewable energy systems, such as solar inverters and wind turbine converters.
- Industrial control systems: The STW70N60M2 can be employed in various industrial control systems, including servo drives, welding machines, and conveyor systems.
In summary, the STW70N60M2 is a high-power MOSFET from STMicroelectronics that offers a combination of high voltage and current capabilities, low on-state resistance, and robustness. It is suitable for a wide range of power electronic applications, including motor control, power supplies, automotive systems, and renewable energy systems.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STW70N60M2 Documents
Download datasheets and manufacturer documentation for STW70N60M2
STW70N60M2 Standard outer labelling 15/Nov/2023 STW70N60M2 Related Parts
Shopping Guide
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