STMicroelectronics

STF24N60M2  

Single FETs, MOSFETs

The STF24N60M2 is a high voltage N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and power converters.

Description:

The STF24N60M2 is a high voltage N-channel MOSFET that features a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 2.4A. It has a low on-state resistance (RDS(on)) of 0.085 ohms maximum at a gate-source voltage (VGS) of 10V. The device also has a fast switching speed and low gate charge, making it suitable for use in high efficiency power conversion applications.

Features:

• High drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 2.4A
• Low on-state resistance (RDS(on)) of 0.085 ohms maximum at VGS of 10V
• Fast switching speed and low gate charge
• Suitable for use in high efficiency power conversion applications

Applications:

• Motor control
• Power supplies
• Power converters
• High voltage switching applications

The STF24N60M2 is available in a variety of packages, including a TO-220 package and a DPAK package. It is designed to operate over a wide range of temperatures, making it suitable for use in a variety of environments. The device is also RoHS compliant, making it suitable for use in environmentally friendly applications.

STF24N60M2 Documents

Download datasheets and manufacturer documentation for STF24N60M2

Datasheets :

STF(I, W)24N60M2      

Other Related Documents :

STF24N60M2 View All Specifications      

HTML Datasheet :

STF(I, W)24N60M2      

PCN Design/Specification :

Marking Layout 10/May/2023