German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STB7NK80Z-1
278-STB7NK80Z-1
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package
13 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
800V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.138nF
STB7NK80Z-1 Description
N-Channel 800 V 5.2A (Tc) 125W (Tc) Through Hole I2PAK
FAQ
What voltage specification is listed for STB7NK80Z-1?
The listed voltage-related specification for STB7NK80Z-1 is 800V.
What is STB7NK80Z-1?
What is the standard lead time for STB7NK80Z-1?
What is the mounting type of STB7NK80Z-1?
Is STB7NK80Z-1 currently in stock?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
