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STMicroelectronics
STB7NK80Z-1
278-STB7NK80Z-1
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package
13 Weeks
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
800V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.138nF
STB7NK80Z-1 Description
N-Channel 800 V 5.2A (Tc) 125W (Tc) Through Hole I2PAK
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STB7NK80Z-1 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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