STMicroelectronics
STD3NK100Z
Single FETs, MOSFETs
STD3NK100Z
278-STD3NK100Z
STMicroelectronics-STD3NK100Z-datasheets-1167285.pdf
MOSFET N-CH 1000V 2.5A DPAK
In Stock : 4059
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
ADD TO RFQ LIST
- 1+
- $1.47384
- $1.47
- 10+
- $1.24697
- $12.47
- 30+
- $1.12277
- $33.68
- 100+
- $0.98035
- $98.04
- 500+
- $0.91908
- $459.54
- 1000+
- $0.89093
- $890.93
ADD TO CART
QUICK ORDER
$1.47384
$1.47
.png?x-oss-process=image/format,webp/resize,p_30)
STD3NK100Z Description
The STD3NK100Z is a N-channel MOSFET transistor manufactured by STMicroelectronics. Here is a brief description of the model, its features, and potential applications:
Description:
The STD3NK100Z is a high-power, high-voltage N-channel MOSFET transistor. It is designed for use in a variety of applications that require efficient switching and high current handling capabilities.
Features:
- N-channel MOSFET design for efficient switching and low on-resistance.
- High voltage rating of 100V, making it suitable for use in high voltage applications.
- High current handling capability, with a continuous drain current (Id) of up to 39A.
- Low on-state resistance (RDS(on)) of 4.5 mΩ max, which helps reduce power dissipation and improve efficiency.
- Logic level compatible gate input, allowing for easy integration with digital control circuits.
- Avalanche energy rating of 75 Joules, providing robust protection against transient voltage spikes.
- Available in a compact, through-hole package (TO-220) for easy installation and heat dissipation.
Applications:
The STD3NK100Z is suitable for use in a wide range of applications that require efficient switching and high current handling capabilities. Some potential applications include:
- Power switching and control in industrial and automotive systems.
- Motor control and driving circuits for electric vehicles, appliances, and industrial machinery.
- DC-DC converters and power supply circuits for high-power electronic devices.
- Battery management systems for electric vehicles and energy storage applications.
- High-power LED driving circuits for lighting applications.
- Inverter circuits for renewable energy systems, such as solar panel power conversion.
Please note that the specific application requirements and design considerations may vary depending on the use case. It is essential to consult the datasheet and design guidelines provided by STMicroelectronics for detailed information on the STD3NK100Z's electrical characteristics, operating conditions, and recommended design practices.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STD3NK100Z Documents
Download datasheets and manufacturer documentation for STD3NK100Z
STx3NK100Z Mult Dev Inner Box Chg 9/Dec/2021 Box Label Chg 28/Jul/2016 STD3NK100Z View All Specifications STx3NK100Z New Lead Frame Design 17/Mar/2023 Related Parts
Shopping Guide
Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service
Follow Us
Please find more information about us from below social media and interact with us!
Information
ERSA LIMITED
[email protected] TEL.:+65 (3) 1252045
260B ANG MO KIO STREET 21 #18-153 KEBUN BARU COURT SINGAPORE
FLAT/RM A7/F KIMLEY COMMERCIAL BUILDING 142-146 QUEEN'S ROAD CENTRAL HK
.png?x-oss-process=image/format,webp/resize,h_32)
©2025 ERSA Electronics Corporation.