STMicroelectronics_STP11NM80

STMicroelectronics
STP11NM80  
Single FETs, MOSFETs

STMicroelectronics
STP11NM80
278-STP11NM80
MOSFET N-CH 800V 11A TO220AB
In Stock : 955

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STP11NM80 Description

STP11NM80 Description

The STP11NM80 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring robust voltage and current handling capabilities. This device features an 800V drain-to-source voltage rating, making it suitable for high-voltage applications. The STP11NM80 also boasts a continuous drain current of 11A at 25°C, ensuring reliable operation in demanding environments.

STP11NM80 Features

  • High Voltage Rating: With an 800V drain-to-source voltage, the STP11NM80 can handle high-voltage applications with ease.
  • High Current Handling: Capable of handling continuous drain currents up to 11A at 25°C, this MOSFET is ideal for applications requiring high current flow.
  • Low On-Resistance: The STP11NM80 features a maximum on-resistance of 400mOhm at 5.5A and 10V, contributing to high efficiency and reduced power loss.
  • Robust Gate Charge: The device has a maximum gate charge of 43.6nC at 10V, ensuring fast switching and low gate drive requirements.
  • Compliance: The STP11NM80 is compliant with REACH regulations and RoHS3 standards, making it suitable for environmentally conscious designs.
  • Package: The device is available in a through-hole TO220AB package, providing a reliable and secure mounting option for various applications.

STP11NM80 Applications

The STP11NM80 is ideal for a wide range of applications, including:

  • Power Electronics: Due to its high voltage and current ratings, the STP11NM80 is well-suited for power electronics applications such as power supplies, motor controls, and inverters.
  • Industrial Automation: The device's robust performance makes it suitable for industrial automation applications, including motor drives and control systems.
  • Automotive: The STP11NM80 can be used in automotive applications, such as electric vehicle (EV) charging systems and power management.
  • RF Power Amplifiers: The device's high voltage and current capabilities make it suitable for RF power amplifiers in telecommunications systems.

Conclusion of STP11NM80

The STP11NM80 from STMicroelectronics is a versatile and high-performance N-channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and compliance with environmental regulations. Its robust performance and wide range of applications make it an excellent choice for power electronics, industrial automation, automotive, and RF power amplifier applications. With its unique features and advantages, the STP11NM80 stands out as a reliable and efficient solution for demanding electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP11NM80 Documents

Download datasheets and manufacturer documentation for STP11NM80

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