STMicroelectronics_STP140N6F7

STMicroelectronics
STP140N6F7  
Single FETs, MOSFETs

STMicroelectronics
STP140N6F7
278-STP140N6F7
Ersa
STMicroelectronics-STP140N6F7-datasheets-8581373.pdf
MOSFET N-CH 60V 80A TO220
In Stock : 7792

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STP140N6F7 Description

STP140N6F7 Description

The STP140N6F7 is a high-performance MOSFET N-CH 60V 80A TO220 from STMicroelectronics. This single FET is designed for applications requiring high power dissipation and efficient switching. With a maximum drain-source voltage of 60V and continuous drain current of 80A at 25°C, the STP140N6F7 delivers exceptional performance in demanding environments. Its low on-resistance of 3.5mOhm at 40A and 10V ensures minimal power loss, while the maximum gate-source voltage of ±20V provides robust control over the device.

STP140N6F7 Features

  • High Power Dissipation: The STP140N6F7 can handle a maximum power dissipation of 158W at the case temperature (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of just 3.5mOhm at 40A and 10V, the STP140N6F7 minimizes power loss and improves efficiency.
  • Robust Gate Control: The maximum gate-source voltage of ±20V ensures reliable and stable control over the device.
  • High Temperature Operation: The STP140N6F7 can operate at junction temperatures up to 175°C, making it ideal for high-temperature applications.
  • Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental and regulatory compliance.
  • Mounting Type: The through-hole mounting type provides a secure and reliable connection in various applications.

STP140N6F7 Applications

The STP140N6F7 is ideal for a wide range of applications, including:

  • Power Supplies: Its high power dissipation and low on-resistance make it suitable for power supply designs.
  • Industrial Control: The STP140N6F7's robust performance and high temperature operation make it ideal for industrial control systems.
  • Automotive Applications: The device's ability to handle high temperatures and power dissipation make it suitable for automotive applications, such as electric vehicle chargers and power management systems.
  • Renewable Energy: The STP140N6F7 can be used in solar inverters and wind turbine power electronics due to its high power dissipation and temperature capabilities.

Conclusion of STP140N6F7

The STP140N6F7 from STMicroelectronics is a high-performance MOSFET designed for demanding applications requiring high power dissipation and efficient switching. Its unique features, such as low on-resistance, robust gate control, and high-temperature operation, make it an ideal choice for power supplies, industrial control systems, automotive applications, and renewable energy systems. With its compliance to REACH and RoHS3 regulations, the STP140N6F7 is a reliable and environmentally friendly solution for various high-power applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP140N6F7 Documents

Download datasheets and manufacturer documentation for STP140N6F7

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Ersa STP140N6F7      

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