STMicroelectronics_STD65N55F3

STMicroelectronics
STD65N55F3  
Single FETs, MOSFETs

STMicroelectronics
STD65N55F3
278-STD65N55F3
Ersa
STMicroelectronics-STD65N55F3-datasheets-616184.pdf
MOSFET N-CH 55V 80A DPAK
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STD65N55F3 Description

STD65N55F3 Description

The STD65N55F3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. This device features a robust 55V drain-to-source voltage rating and can handle continuous drain currents up to 80A at 25°C. With a maximum power dissipation of 110W and a low on-resistance of 8.5mOhm at 32A and 10V gate voltage, the STD65N55F3 offers excellent efficiency and performance in demanding power electronic applications.

STD65N55F3 Features

  • High Voltage Rating: The STD65N55F3 boasts a 55V drain-to-source voltage rating, making it suitable for high-voltage applications.
  • High Current Capability: Capable of handling continuous drain currents up to 80A at 25°C, this MOSFET is ideal for high-power applications.
  • Low On-Resistance: With an on-resistance of just 8.5mOhm at 32A and 10V gate voltage, the STD65N55F3 offers high efficiency and low power loss.
  • Robust Power Dissipation: The device can dissipate up to 110W of power, ensuring reliable operation in high-power applications.
  • Surface Mount Package: The DPAK package allows for easy integration into surface mount applications, improving manufacturing efficiency.
  • Compliance: The STD65N55F3 is compliant with RoHS3 and REACH standards, ensuring environmental and regulatory compliance.

STD65N55F3 Applications

The STD65N55F3 is ideal for a wide range of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STD65N55F3 is well-suited for use in power supply designs.
  • Industrial Control: The device's robust performance makes it suitable for use in industrial control systems, such as motor drives and inverters.
  • Automotive Applications: The STD65N55F3 can be used in various automotive applications, including electric vehicle charging systems and power management.
  • Renewable Energy: This MOSFET is also suitable for use in renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STD65N55F3

The STD65N55F3 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage, current, and power ratings, making it an excellent choice for demanding power electronic applications. Its low on-resistance, robust power dissipation, and compliance with environmental standards make it a reliable and efficient solution for a wide range of applications, from power supplies to renewable energy systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD65N55F3 Documents

Download datasheets and manufacturer documentation for STD65N55F3

Ersa STD65N55F3      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STD65N55F3 View All Specifications      
Ersa STD65N55F3      

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