STMicroelectronics_STP28N60M2

STMicroelectronics
STP28N60M2  
Single FETs, MOSFETs

STMicroelectronics
STP28N60M2
278-STP28N60M2
Ersa
STMicroelectronics-STP28N60M2-datasheets-1913070.pdf
MOSFET N-CH 600V 24A TO220
In Stock : 875

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STP28N60M2 Description

STP28N60M2 Description

The STP28N60M2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at 25°C, this N-CH device is ideal for demanding power electronic applications.

STP28N60M2 Features

  • High Voltage and Current Ratings: The STP28N60M2 boasts a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 150mOhm at 12A and 10V, the STP28N60M2 offers low conduction losses, improving efficiency in power conversion systems.
  • Fast Switching: The device features a maximum gate charge (Qg) of 37nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA, enabling fast switching and reducing switching losses.
  • Robust Construction: The STP28N60M2 is housed in a through-hole TO220 package, providing excellent thermal dissipation and mechanical robustness.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STP28N60M2 Applications

The STP28N60M2 is ideal for a variety of power electronic applications, including:

  • Motor Drives: The high voltage and current ratings, along with low on-resistance, make it suitable for motor control applications.
  • Power Supplies: The STP28N60M2 can be used in power supply designs, where high efficiency and fast switching are critical.
  • Industrial Automation: The robust construction and high power ratings make it suitable for industrial automation applications, such as motor control and power distribution.

Conclusion of STP28N60M2

The STP28N60M2 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronic applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for motor drives, power supplies, and industrial automation applications. With its robust construction and environmental compliance, the STP28N60M2 is a reliable and efficient solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP28N60M2 Documents

Download datasheets and manufacturer documentation for STP28N60M2

Ersa STx28N60M2 Datasheet      
Ersa STx28N60M2 Datasheet      

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