STMicroelectronics_STD18NF25

STMicroelectronics
STD18NF25  
Single FETs, MOSFETs

STMicroelectronics
STD18NF25
278-STD18NF25
Ersa
STMicroelectronics-STD18NF25-datasheets-12829288.pdf
MOSFET N-CH 250V 17A DPAK
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    STD18NF25 Description

    The STD18NF25 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and power management.

    Description:

    The STD18NF25 is an N-channel enhancement mode MOSFET with a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 2.5A. It has a low on-state resistance (RDS(on)) of 5.5 ohms maximum, which helps to minimize power dissipation and improve efficiency.

    Features:

    • High voltage operation: The STD18NF25 is designed to operate at high voltages, making it suitable for use in applications that require high voltage switching or power management.
    • Low on-state resistance: The low RDS(on) of the STD18NF25 helps to minimize power dissipation and improve efficiency in switching applications.
    • High input impedance: The high input impedance of the STD18NF25 allows it to be easily driven by a variety of control circuits.
    • Robust construction: The STD18NF25 is built with a robust construction that provides excellent thermal performance and reliability.

    Applications:

    The STD18NF25 is suitable for use in a variety of applications, including:

    • High voltage switching: The high voltage capability of the STD18NF25 makes it well-suited for use in high voltage switching applications, such as motor control and power supplies.
    • Power management: The low on-state resistance and high input impedance of the STD18NF25 make it an excellent choice for use in power management applications, such as battery management systems and power distribution circuits.
    • Motor control: The STD18NF25 can be used in motor control applications, such as in industrial machinery and automotive systems, to provide efficient and reliable switching and control of motor power.
    • Inverters: The high voltage and low on-state resistance of the STD18NF25 make it suitable for use in inverters, such as those used in renewable energy systems and power supplies.

    Overall, the STD18NF25 is a versatile and reliable MOSFET transistor that is well-suited for use in a variety of high voltage switching and power management applications. Its robust construction and low on-state resistance make it an excellent choice for applications that require efficient and reliable power control.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    ECCN (EU)
    RoHs compliant

    STD18NF25 Documents

    Download datasheets and manufacturer documentation for STD18NF25

    Ersa Assembly Site 07/Nov/2022      
    Ersa ST(B,D)18NF25      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STD18NF25 View All Specifications      
    Ersa ST(B,D)18NF25      

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