STMicroelectronics_STB18NF30

STMicroelectronics
STB18NF30  
Single FETs, MOSFETs

STMicroelectronics
STB18NF30
278-STB18NF30
Ersa
STMicroelectronics-STB18NF30-datasheets-8057483.pdf
MOSFET N-CH 330V 18A D2PAK
In Stock : 556

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STB18NF30 Description

STB18NF30 Description

The STB18NF30 is a high-performance N-channel MOSFET from STMicroelectronics, designed for automotive applications. With a drain-to-source voltage (Vdss) of 330V and a continuous drain current (Id) of 18A at 25°C, this device offers excellent electrical characteristics for demanding power management tasks. The STB18NF30 features a low on-resistance (Rds On) of 180mOhm at 9A and 10V, ensuring high efficiency in power conversion applications. Its high gate voltage (Vgs) of ±20V provides robust operation in various electronic systems.

STB18NF30 Features

  • Low On-Resistance: The STB18NF30 boasts a maximum on-resistance (Rds On) of 180mOhm at 9A and 10V, which helps minimize power losses and improve efficiency in power conversion applications.
  • High Drain-to-Source Voltage: With a Vdss of 330V, this MOSFET can handle high voltage applications, making it suitable for automotive and industrial power electronics.
  • Robust Gate Voltage: The ±20V gate voltage rating ensures reliable operation in various electronic systems, providing flexibility in circuit design.
  • Automotive Grade: Designed and qualified for automotive applications, the STB18NF30 offers robust performance in harsh environments.
  • Surface Mount Package: The D2PAK package allows for easy integration into surface-mount printed circuit boards, enabling compact and efficient designs.

STB18NF30 Applications

The STB18NF30 is ideal for a variety of applications where high voltage and current handling are required, including:

  • Automotive Power Management: Due to its automotive-grade qualification, the STB18NF30 is well-suited for power management in vehicles, such as battery management systems and electric power steering.
  • Industrial Power Supplies: The high voltage and current ratings make this MOSFET suitable for power conversion in industrial applications, such as motor drives and power inverters.
  • Renewable Energy Systems: The STB18NF30 can be used in solar power inverters and wind energy conversion systems, where high voltage and current handling are critical.

Conclusion of STB18NF30

The STB18NF30 from STMicroelectronics is a powerful N-channel MOSFET designed for high-voltage and high-current applications. Its low on-resistance, high drain-to-source voltage, and robust gate voltage make it an excellent choice for automotive and industrial power electronics. With its automotive-grade qualification and surface-mount package, the STB18NF30 offers a reliable and efficient solution for demanding power management tasks.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STB18NF30 Documents

Download datasheets and manufacturer documentation for STB18NF30

Ersa Mult Devices Testing 10/May/2018      
Ersa STB18NF30 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB18NF30 View All Specifications      
Ersa STB18NF30 Datasheet      
Ersa D2PAK Lead Modification 04/Oct/2013      

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