STMicroelectronics_STP40N65M2

STMicroelectronics
STP40N65M2  
Single FETs, MOSFETs

STMicroelectronics
STP40N65M2
278-STP40N65M2
Ersa
STMicroelectronics-STP40N65M2-datasheets-9784916.pdf
MOSFET N-CH 650V 32A TO220
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STP40N65M2 Description

STP40N65M2 Description

The STP40N65M2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This N-Channel MOSFET operates at a drain-to-source voltage of 650V and can handle continuous drain currents of up to 32A at 25°C. With a maximum power dissipation of 250W, the STP40N65M2 is well-suited for demanding applications in the electronics industry.

STP40N65M2 Features

  • High Voltage and Current Ratings: The STP40N65M2 boasts a drain-to-source voltage of 650V and can handle continuous drain currents of up to 32A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds(on)) of 99mOhm at 16A and 10V, the STP40N65M2 offers efficient power dissipation and reduced power losses.
  • Robust Gate Charge and Input Capacitance: The device features a maximum gate charge (Qg) of 56.5nC at 10V and an input capacitance (Ciss) of 2355pF at 100V, ensuring fast switching and minimal parasitic effects.
  • Compliance and Environmental Standards: The STP40N65M2 is REACH unaffected and RoHS3 compliant, adhering to strict environmental and safety regulations.
  • Wide Operating Temperature Range: The device operates within a junction temperature range of -55°C to 150°C, making it suitable for a variety of applications in different environmental conditions.

STP40N65M2 Applications

The STP40N65M2 is an ideal choice for applications requiring high voltage and current capabilities, such as:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
  • Industrial Control Systems: The robust performance and compliance with environmental standards make it ideal for use in industrial control systems, where reliability and safety are paramount.
  • Automotive Applications: The STP40N65M2's high voltage and temperature ratings make it suitable for automotive applications, such as electric vehicle charging systems and power electronics.

Conclusion of STP40N65M2

The STP40N65M2 from STMicroelectronics is a high-performance MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and compliance with environmental standards. Its robust performance and wide operating temperature range make it an ideal choice for a variety of applications in the electronics industry, including power supplies, industrial control systems, and automotive applications. With its unique features and advantages over similar models, the STP40N65M2 is a reliable and efficient solution for demanding applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP40N65M2 Documents

Download datasheets and manufacturer documentation for STP40N65M2

Ersa ST(I,P)40N65M2      
Ersa ST(I,P)40N65M2      

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