STMicroelectronics_STD60NF55LAT4

STMicroelectronics
STD60NF55LAT4  
Single FETs, MOSFETs

STMicroelectronics
STD60NF55LAT4
278-STD60NF55LAT4
Ersa
STMicroelectronics-STD60NF55LAT4-datasheets-11925244.pdf
MOSFET N-CH 55V 60A DPAK
In Stock : 1929

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STD60NF55LAT4 Description

STD60NF55LAT4 Description

The STD60NF55LAT4 is a high-performance, automotive-grade N-channel MOSFET manufactured by STMicroelectronics. This device is designed for demanding applications that require high efficiency and reliability. With a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 60A at 25°C, the STD60NF55LAT4 is capable of handling high power levels while maintaining low on-resistance (Rds On) of 15mOhm at 30A and 10V. The device is also designed to operate over a wide range of gate-source voltages (Vgs), with a maximum of ±15V.

STD60NF55LAT4 Features

  • High Drain-to-Source Voltage (Vdss): 55V, enabling the device to handle high voltage applications.
  • Continuous Drain Current (Id): 60A at 25°C, providing high current capacity.
  • Low On-Resistance (Rds On): 15mOhm at 30A and 10V, reducing power losses and improving efficiency.
  • Wide Gate-Source Voltage Range (Vgs): ±15V, offering flexibility in gate drive requirements.
  • SuperFET® II Series: Known for its superior performance and reliability in automotive applications.
  • Automotive Grade: Designed to meet the stringent requirements of automotive electronics.
  • Surface Mount Technology:
  • REACH Unaffected and RoHS3 Compliant: Ensuring environmental compliance and reducing the risk of regulatory issues.

STD60NF55LAT4 Applications

The STD60NF55LAT4 is ideal for a variety of high-power applications in the automotive sector, including:

  • Electric Vehicle (EV) Systems: Such as battery management systems, motor controls, and power inverters.
  • Power Management Systems: For managing high current and voltage in automotive electronics.
  • Industrial Control Systems: Where high power and reliability are crucial.
  • High-End Audio Amplifiers: Due to its ability to handle high current and provide low distortion.

Conclusion of STD60NF55LAT4

The STD60NF55LAT4 stands out in the market for its combination of high voltage and current handling capabilities, low on-resistance, and automotive-grade reliability. Its unique features make it an excellent choice for demanding applications where performance and durability are critical. With its compliance with environmental regulations and its robust design, the STD60NF55LAT4 is a reliable component for engineers looking to build high-performance automotive and industrial systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
ECCN (EU)
RoHs compliant

STD60NF55LAT4 Documents

Download datasheets and manufacturer documentation for STD60NF55LAT4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa STD60NF55LA      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD60NF55LA      

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