STMicroelectronics_STH240N10F7-2

STMicroelectronics
STH240N10F7-2  
Single FETs, MOSFETs

STMicroelectronics
STH240N10F7-2
278-STH240N10F7-2
Ersa
STMicroelectronics-STH240N10F7-2-datasheets-12441875.pdf
MOSFET N-CH 100V 180A H2PAK-2
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    STH240N10F7-2 Description

    STMicroelectronics' STH240N10F7-2 is a high-power, high-voltage N-channel MOSFET transistor. It is designed for use in a variety of applications, including automotive, industrial, and consumer electronics.

    Description:

    The STH240N10F7-2 is an N-channel MOSFET transistor with a voltage rating of 100V and a continuous drain current of 240A. It is available in a TO-247AC package, which is a surface-mount package that offers high thermal performance and ease of assembly.

    Features:

    • High voltage rating of 100V
    • Continuous drain current of 240A
    • N-channel MOSFET design
    • TO-247AC surface-mount package
    • Low on-state resistance for improved efficiency
    • High input impedance for ease of drive
    • Robust design for use in demanding applications

    Applications:

    The STH240N10F7-2 is suitable for use in a wide range of applications, including:

    1. Automotive applications, such as electric power steering, windshield wipers, and air conditioning systems.
    2. Industrial applications, such as motor control, power supplies, and battery management systems.
    3. Consumer electronics, such as power adapters, chargers, and LED lighting systems.
    4. Renewable energy systems, such as solar panel inverters and wind turbine converters.

    Overall, the STH240N10F7-2 is a high-performance MOSFET transistor that offers excellent electrical characteristics and robust design, making it suitable for use in a wide range of power electronic applications.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Supplier Temperature Grade
    Rds On (Max) @ Id, Vgs
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Package Length
    Series
    Operating Junction Temperature (°C)
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STH240N10F7-2 Documents

    Download datasheets and manufacturer documentation for STH240N10F7-2

    Ersa STH240N10F7-2, STH240N10F7-6      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa STH240N10F7-2, STH240N10F7-6      
    Ersa STH240N10F7 Datasheet Update 13/Apr/2019      

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