STMicroelectronics_STP80NF55-08

STMicroelectronics
STP80NF55-08  
Single FETs, MOSFETs

STMicroelectronics
STP80NF55-08
278-STP80NF55-08
MOSFET N-CH 55V 80A TO220AB
In Stock : 17000

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STP80NF55-08 Description

STP80NF55-08 Description

The STP80NF55-08 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. It operates with a drain-source voltage (Vdss) of 55V and can handle a continuous drain current (Id) of 80A at 25°C. The device features a low on-resistance (Rds On) of 8mOhm at 40A and 10V, ensuring minimal power dissipation. The STP80NF55-08 is packaged in a TO220AB through-hole package, making it suitable for a wide range of applications.

STP80NF55-08 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Drain to Source Voltage (Vdss): 55V - Suitable for applications requiring high voltage handling.
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V - Ensures low power dissipation and high efficiency.
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V - Minimizes switching losses and improves performance.
  • Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V - Reduces parasitic effects and improves high-frequency performance.
  • Vgs (Max): ±20V - Allows for a wide range of gate drive voltages.
  • Vgs(th) (Max) @ Id: 4V @ 250µA - Facilitates easy turn-on and control.
  • Power Dissipation (Max): 300W (Tc) - Capable of handling high power dissipation in demanding applications.
  • Mounting Type: Through Hole - Provides a secure and reliable connection in various circuit designs.

STP80NF55-08 Applications

The STP80NF55-08 is ideal for applications that require high power handling, efficient switching, and robust performance. Some specific use cases include:

  1. Power Supplies: The high voltage and current ratings make it suitable for power supply designs, where efficient switching and power dissipation are critical.
  2. Motor Control: The device's ability to handle high currents and voltages makes it ideal for motor control applications, ensuring reliable operation and efficient power management.
  3. Industrial Automation: The STP80NF55-08's robust performance and high power dissipation capabilities make it suitable for industrial automation systems, where reliability and efficiency are paramount.
  4. Automotive Applications: The device's high voltage and current ratings, along with its low on-resistance, make it suitable for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of STP80NF55-08

The STP80NF55-08 is a high-performance N-Channel MOSFET from STMicroelectronics, offering excellent electrical characteristics, robust power handling, and efficient switching capabilities. Its unique features, such as low on-resistance, high voltage and current ratings, and minimal switching losses, make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and automotive systems. While it is not recommended for new designs, the STP80NF55-08 remains a reliable and efficient solution for existing applications that require its specific performance characteristics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP80NF55-08 Documents

Download datasheets and manufacturer documentation for STP80NF55-08

Ersa STx80NF55-08(T4)      
Ersa STP80NF55-08 View All Specifications      
Ersa STx80NF55-08(T4)      

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