STMicroelectronics_STD2HNK60Z-1
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STMicroelectronics
STD2HNK60Z-1

278-STD2HNK60Z-1
PDF Datasheet
600V N-Channel Power MOSFET, 2A, 4.8 Ohm, IPAK
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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.8R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.8R
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
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STD2HNK60Z-1 Description

STD2HNK60Z-1 Description

The STD2HNK60Z-1 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 600V and a continuous drain current of 2A at 25°C, this device is well-suited for various power electronics applications. Its low on-resistance of 4.8 Ohms at 1A and 10V ensures minimal power dissipation, while the maximum gate-source voltage of ±30V provides flexibility in gate drive circuits.

STD2HNK60Z-1 Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
  • 2A Continuous Drain Current (Id) @ 25°C: Delivers robust current handling capabilities.
  • 4.8 Ohm On-Resistance (Rds On) @ 1A, 10V: Minimizes power losses and improves efficiency.
  • ±30V Maximum Gate-Source Voltage (Vgs): Offers flexibility in gate drive circuit design.
  • 4.5V Maximum Threshold Voltage (Vgs(th)) @ 50µA: Ensures reliable device turn-on.
  • 15 nC Maximum Gate Charge (Qg) @ 10V: Contributes to fast switching speeds and low switching losses.
  • 280 pF Maximum Input Capacitance (Ciss) @ 25V: Facilitates high-speed operation.
  • 45W Maximum Power Dissipation (Tc): Designed for demanding power applications.
  • SuperMESH™ Series: Offers superior performance and reliability in power switching applications.
  • Through Hole Mounting Type: Provides ease of integration in various circuit designs.
  • ROHS3 Compliant: Meets environmental regulations for safe disposal and recycling.
  • REACH Unaffected: Complies with the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations.

STD2HNK60Z-1 Applications

The STD2HNK60Z-1 is ideal for a wide range of applications where high voltage and current handling are required, combined with efficient power switching. Some specific use cases include:

  1. Power Supplies: In switch-mode power supplies (SMPS) and linear power supplies, the STD2HNK60Z-1 can handle the high voltage and current demands while minimizing power losses.
  2. Motor Control: For electric motor drives, this MOSFET can efficiently switch and control the motor's power, ensuring smooth and reliable operation.
  3. Industrial Automation: In industrial control systems, the STD2HNK60Z-1 can be used for high-voltage switching and control, providing robust performance in demanding environments.
  4. Automotive Electronics: Suitable for various automotive applications, such as electric power steering (EPS) and battery management systems, where high voltage and current handling are crucial.

Conclusion of STD2HNK60Z-1

The STD2HNK60Z-1 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its unique features, such as the SuperMESH™ series and ROHS3 compliance, make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, industrial automation, and automotive electronics. With its robust performance and compliance with environmental regulations, the STD2HNK60Z-1 stands out as a reliable and efficient solution for high-voltage switching and power management.

FAQ

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Yes. STD2HNK60Z-1 currently has 3 pricing tier(s), starting from 1 units.
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Availability (In Stock : 199 )
Quantity Unit Price Ext. Price
1+ $1.37143 $1.37
10+ $1.12628 $11.26
30+ $0.99257 $29.78
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