


STMicroelectronics
STB11N52K3
278-STB11N52K3
PDF Datasheet
525V 10A N-CH MOSFET, 510mR RdsOn, TO-263 D2PAK
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Responsible qualityTech Specifications
Package / Case
TO-263
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
525V
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
410MR
Fall Time
42ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
STB11N52K3 Description
N-Channel 525 V 10A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
FAQ
What package or case is STB11N52K3 available in?
STB11N52K3 is available in the TO-263 package / case.
Are there related or alternative parts for STB11N52K3?
What operating temperature range does STB11N52K3 support?
What is the mounting type of STB11N52K3?
What voltage specification is listed for STB11N52K3?





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