STMicroelectronics_STW6N120K3
original

STMicroelectronics
STW6N120K3

278-STW6N120K3
PDF Datasheet
1200V N-Ch MOSFET, 6A, 2.4 Ohm, TO-247

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-247
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
2.4R
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
2.4R
Fall Time
32ns
Gate to Source Voltage (Vgs)
30V
Show More

STW6N120K3 Description

STW6N120K3 Description

The STW6N120K3 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a drain to source voltage (Vdss) of 1200V and a continuous drain current (Id) of 6A at 25°C, this N-CH device is well-suited for applications in power electronics, industrial control, and automotive systems.

STW6N120K3 Features

  • High Voltage and Current Handling: The STW6N120K3 can handle a maximum drain to source voltage of 1200V and a continuous drain current of 6A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: The device features a maximum on-resistance (Rds On) of 2.4Ω at 2.5A and 10V, ensuring efficient power dissipation and reduced power loss.
  • Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 100µA, the STW6N120K3 offers reliable gate control and operation.
  • Low Input Capacitance: The device has a maximum input capacitance (Ciss) of 1050 pF at 100V, contributing to faster switching speeds and reduced parasitic effects.
  • Low Gate Charge: The maximum gate charge (Qg) is 34 nC at 10V, enabling efficient gate drive and reduced power consumption.
  • Compliance and Environmental: The STW6N120K3 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious applications.

STW6N120K3 Applications

  • Power Electronics: The STW6N120K3's high voltage and current ratings make it ideal for power conversion, motor control, and power supply applications.
  • Industrial Control: Its robust performance characteristics make it suitable for use in industrial automation, robotics, and process control systems.
  • Automotive Systems: The device's ability to handle high voltages and currents, along with its low on-resistance, makes it well-suited for automotive applications such as electric vehicle charging systems and power management.

Conclusion of STW6N120K3

The STW6N120K3 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with environmental regulations and suitability for a wide range of applications make it an excellent choice for power electronics, industrial control, and automotive systems. However, it is important to note that the STW6N120K3 is currently classified as obsolete, which may impact its availability and long-term support.

FAQ

What is the mounting type of STW6N120K3?
STW6N120K3 uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for STW6N120K3?
What operating temperature range does STW6N120K3 support?
What voltage specification is listed for STW6N120K3?
What is STW6N120K3?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ