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STMicroelectronics
STU1HN60K3
278-STU1HN60K3
PDF Datasheet
600V N-CH MOSFET, 1.2A, 6.7 Ohm, IPAK, Through Hole
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Tech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
6.7R
Drain to Source Voltage (Vdss)
600V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
STU1HN60K3 Description
N-Channel 600 V 1.2A (Tc) 27W (Tc) Through Hole TO-251 (IPAK)
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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