German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STU1HN60K3
278-STU1HN60K3
PDF Datasheet
600V N-CH MOSFET, 1.2A, 6.7 Ohm, IPAK, Through Hole
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
6.7R
Drain to Source Voltage (Vdss)
600V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
STU1HN60K3 Description
N-Channel 600 V 1.2A (Tc) 27W (Tc) Through Hole TO-251 (IPAK)
FAQ
What is STU1HN60K3?
STU1HN60K3 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does STU1HN60K3 support?
What package or case is STU1HN60K3 available in?
Is STU1HN60K3 currently in stock?
What is the mounting type of STU1HN60K3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
