STMicroelectronics_STP7N95K3

STMicroelectronics
STP7N95K3  
Single FETs, MOSFETs

STMicroelectronics
STP7N95K3
278-STP7N95K3
Ersa
STMicroelectronics-STP7N95K3-datasheets-13469813.pdf
MOSFET N-CH 950V 7.2A TO220-3
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STP7N95K3 Description

STP7N95K3 Description

The STP7N95K3 is a high-performance MOSFET N-CH 950V 7.2A TO220-3 manufactured by STMicroelectronics. This single FET is designed for applications requiring high voltage and current capabilities. With its advanced technology and superior performance, the STP7N95K3 stands out in the market.

STP7N95K3 Features

  • Technology: MOSFET (Metal Oxide) - Ensures high efficiency and reliability in electronic circuits.
  • Drain to Source Voltage (Vdss): 950V - Capable of handling high voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) - Provides high current capabilities for demanding applications.
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V - Offers low on-resistance for improved performance.
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V - Minimizes power loss and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V - Reduces capacitive effects and enhances performance.
  • Vgs (Max): ±30V - Allows for a wide range of gate voltages.
  • Drive Voltage (Max Rds On, Min Rds On): 10V - Simplifies the design and reduces complexity.
  • Power Dissipation (Max): 150W (Tc) - Capable of handling high power applications.
  • Mounting Type: Through Hole - Facilitates easy integration into existing designs.
  • Package: Tube - Provides protection and ensures long-term reliability.

STP7N95K3 Applications

The STP7N95K3 is ideal for a wide range of applications, including:

  1. Industrial Control Systems: Due to its high voltage and current capabilities, the STP7N95K3 is well-suited for industrial control systems that require reliable and efficient power management.
  2. Automotive Applications: The STP7N95K3's robust performance makes it an excellent choice for automotive applications, such as electric vehicle charging systems and power management.
  3. Power Supplies: The STP7N95K3's high voltage and low on-resistance make it ideal for power supply applications, where efficiency and reliability are critical.

Conclusion of STP7N95K3

The STP7N95K3 from STMicroelectronics is a high-performance MOSFET N-CH 950V 7.2A TO220-3 that offers superior technical specifications and performance benefits. Its unique features, such as low on-resistance, high voltage and current capabilities, and advanced technology, make it an ideal choice for a wide range of applications, including industrial control systems, automotive applications, and power supplies. With its REACH unaffected status, ROHS3 compliance, and moisture sensitivity level of 1, the STP7N95K3 is a reliable and environmentally friendly solution for your electronic design needs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP7N95K3 Documents

Download datasheets and manufacturer documentation for STP7N95K3

Ersa STx7N95K3      
Ersa STP7N95K3 View All Specifications      
Ersa STx7N95K3      

Shopping Guide

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