The STF26N65DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 650V and a continuous drain current of 20A at 25°C, this device is well-suited for a variety of high-voltage, high-current applications.
STF26N65DM2 Features
High Voltage Rating: Capable of handling 650V drain-to-source voltage, making it ideal for high-voltage applications.
High Current Capability: Supports a continuous drain current of 20A at 25°C, ensuring robust power handling.
Low On-Resistance: With a maximum Rds(on) of 190mOhm at 10A and 10V, the STF26N65DM2 offers efficient power dissipation.
Low Gate Charge: Features a maximum gate charge (Qg) of 35.5 nC at 10V, contributing to fast switching and reduced power loss.
Wide Gate Voltage Range: Operates with a maximum gate-source voltage (Vgs) of ±25V, providing flexibility in circuit design.
Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
Package: Available in a through-hole TO220FP package, facilitating easy integration into existing designs.
STF26N65DM2 Applications
The STF26N65DM2 is well-suited for a variety of applications where high voltage and current handling are required:
Power Supplies: Ideal for high-voltage power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Industrial Control: Suitable for motor control and industrial automation applications, where high voltage and current are necessary.
Automotive: Can be used in automotive applications, such as electric vehicle (EV) charging systems and power management.
Renewable Energy: Useful in solar power inverters and wind turbine control systems, where high-voltage and current handling are crucial.
Conclusion of STF26N65DM2
The STF26N65DM2 from STMicroelectronics is a versatile and high-performance MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its compliance with environmental and regulatory standards, along with its robust design, make it an excellent choice for a wide range of high-voltage and high-current applications in power electronics, industrial control, automotive, and renewable energy sectors.
Tech Specifications
Unit Weight
Configuration
Id - Continuous Drain Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Supplier Device Package
RoHS
Qg - Gate Charge
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Number of Channels
Technology
REACH Status
Mfr
Vgs (Max)
Maximum Operating Temperature
Rds On - Drain-Source Resistance
RoHS Status
Mounting Style
Operating Temperature
FET Feature
Vgs - Gate-Source Voltage
ECCN
Transistor Polarity
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Pd - Power Dissipation
USHTS
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant
STF26N65DM2 Documents
Download datasheets and manufacturer documentation for STF26N65DM2
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