STMicroelectronics_STF35N65DM2

STMicroelectronics
STF35N65DM2  
Single FETs, MOSFETs

STMicroelectronics
STF35N65DM2
278-STF35N65DM2
Ersa
STMicroelectronics-STF35N65DM2-datasheets-807808.pdf
MOSFET N-CH 650V 32A TO220FP
In Stock : 678

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    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STF35N65DM2 Description

    Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STF35N65DM2 belongs to can be classified under the Discrete Semiconductors. STF35N65DM2 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STF35N65DM2 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Unit Weight
    Configuration
    Id - Continuous Drain Current
    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Channel Mode
    Product Status
    Supplier Device Package
    RoHS
    Qg - Gate Charge
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Tradename
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    RoHS Status
    Mounting Style
    Operating Temperature
    FET Feature
    Vgs - Gate-Source Voltage
    ECCN
    Transistor Polarity
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Pd - Power Dissipation
    USHTS
    Base Product Number
    Supplier Package
    ECCN (US)
    Grade
    ECCN (EU)
    RoHs compliant

    STF35N65DM2 Documents

    Download datasheets and manufacturer documentation for STF35N65DM2

    Ersa STF35N65DM2      
    Ersa STF35N65DM2      

    Shopping Guide

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