STMicroelectronics_STW33N60DM2

STMicroelectronics
STW33N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STW33N60DM2
278-STW33N60DM2
Ersa
STMicroelectronics-STW33N60DM2-datasheets-273215.pdf
MOSFET N-CH 600V 24A TO247
In Stock : 9013

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STW33N60DM2 Description

STW33N60DM2 Description

The STW33N60DM2 is a high-performance MOSFET N-CH 600V 24A TO247 device manufactured by STMicroelectronics. This single FET is designed for applications requiring high power dissipation and efficient switching. With a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at 25°C, the STW33N60DM2 offers excellent performance in demanding electronic systems.

STW33N60DM2 Features

  • High Voltage and Current Ratings: The STW33N60DM2 boasts a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 130mOhm at 12A and 10V, the STW33N60DM2 provides efficient power switching with minimal power loss.
  • Fast Switching Speed: The device has a maximum gate charge (Qg) of 43nC at 10V and a threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching and reduced switching losses.
  • Robust Construction: The STW33N60DM2 is housed in a through-hole TO247 package, providing excellent thermal dissipation and mechanical stability.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STW33N60DM2 Applications

The STW33N60DM2 is ideal for a variety of high-power applications, including:

  • Industrial Motor Control: Due to its high voltage and current ratings, the STW33N60DM2 is well-suited for motor control applications in industrial settings.
  • Power Supplies: The device's low on-resistance and fast switching capabilities make it an excellent choice for power supply designs, particularly those requiring high efficiency and low power loss.
  • Automotive Electronics: The STW33N60DM2's robust construction and high power dissipation capabilities make it suitable for automotive applications, such as electric vehicle chargers and power management systems.

Conclusion of STW33N60DM2

The STW33N60DM2 is a powerful MOSFET N-CH 600V 24A TO247 device that offers excellent performance in high-power applications. Its high voltage and current ratings, low on-resistance, and fast switching capabilities make it an ideal choice for industrial motor control, power supplies, and automotive electronics. With its robust construction and environmental compliance, the STW33N60DM2 is a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Configuration
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW33N60DM2 Documents

Download datasheets and manufacturer documentation for STW33N60DM2

Ersa Wafer 15/Feb/2019      
Ersa ST(B,P,W)33N60DM2      
Ersa Standard outer labelling 15/Nov/2023      
Ersa ST(B,P,W)33N60DM2      

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