STMicroelectronics_STD3NM60N

STMicroelectronics
STD3NM60N  
Single FETs, MOSFETs

STMicroelectronics
STD3NM60N
278-STD3NM60N
Ersa
STMicroelectronics-STD3NM60N-datasheets-2917331.pdf
MOSFET N-CH 600V 3.3A DPAK
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STD3NM60N Description

STD3NM60N Description

The STD3NM60N is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring efficient power management and high voltage handling. Leveraging advanced MOSFET technology, this device offers a unique combination of low on-resistance, high input capacitance, and low gate charge, making it ideal for a wide range of applications.

STD3NM60N Features

  • 600V Drain to Source Voltage (Vdss): The STD3NM60N can handle high voltages, making it suitable for applications such as power supplies, motor controls, and industrial equipment.
  • 3.3A Continuous Drain Current (Id) @ 25°C: This MOSFET can manage significant current loads, ensuring reliable performance in demanding applications.
  • 1.8 Ohm Maximum On-Resistance (Rds On): The low on-resistance of the STD3NM60N contributes to high efficiency and reduced power loss.
  • 9.5 nC Maximum Gate Charge (Qg): This low gate charge helps minimize switching losses, improving overall device efficiency.
  • 188 pF Maximum Input Capacitance (Ciss): The STD3NM60N's high input capacitance allows for faster switching speeds and better high-frequency performance.
  • 4V Maximum Threshold Voltage (Vgs(th)): This ensures reliable operation with a wide range of gate drive voltages.
  • ±25V Maximum Gate-to-Source Voltage (Vgs): The STD3NM60N can operate with a broad range of gate voltages, providing design flexibility.
  • 50W Maximum Power Dissipation (Tc): This high power dissipation rating allows the device to handle demanding power applications.
  • Surface Mount Technology: The DPAK package enables easy integration into surface mount designs, improving manufacturing efficiency and reliability.
  • ROHS3 Compliance and REACH Unaffected Status: The STD3NM60N meets stringent environmental standards, ensuring compliance with global regulations.

STD3NM60N Applications

The STD3NM60N is well-suited for a variety of applications where high voltage and current handling are required, including:

  • Power Supplies: The high voltage and current ratings make it ideal for power supply designs.
  • Motor Controls: The device's ability to handle high currents and voltages makes it suitable for motor control applications.
  • Industrial Equipment: The robustness and high power dissipation of the STD3NM60N make it a good fit for industrial control systems.
  • Automotive Applications: The high voltage and current ratings, along with the ability to handle high temperatures, make it suitable for automotive electronics.

Conclusion of STD3NM60N

The STD3NM60N from STMicroelectronics stands out due to its combination of high voltage and current capabilities, low on-resistance, and compliance with environmental standards. Its performance benefits and unique features make it an excellent choice for applications requiring high efficiency and reliability. With its robust performance and wide range of applications, the STD3NM60N is a valuable component in the design of modern electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD3NM60N Documents

Download datasheets and manufacturer documentation for STD3NM60N

Ersa IPG-PWR/14/8603 21/Jul/2014      
Ersa STD3NM60N      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD3NM60N View All Specifications      
Ersa STD3NM60N      

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