STMicroelectronics_STB140NF75T4

STMicroelectronics
STB140NF75T4  
Single FETs, MOSFETs

STMicroelectronics
STB140NF75T4
278-STB140NF75T4
MOSFET N-CH 75V 120A D2PAK
In Stock : 4847

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STB140NF75T4 Description

STB140NF75T4 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in high-power applications, such as motor control, power supplies, and automotive systems.

Description:

The STB140NF75T4 is an N-channel MOSFET with a voltage rating of 75V and a continuous drain current of 140A. It is packaged in a TO-247AC surface-mount package, which is suitable for use in high-power applications where space is limited.

Features:

  1. High-power MOSFET with a voltage rating of 75V and a continuous drain current of 140A.
  2. Low on-state resistance (RDS(on)) of 0.04 Ohms, which reduces power dissipation and improves efficiency.
  3. High switching speed and low switching losses, which makes it suitable for use in high-frequency applications.
  4. Integrated body diode for efficient bidirectional current flow.
  5. Robust design with built-in protection against over-voltage, over-current, and over-temperature conditions.
  6. Suitable for use in high-power applications, such as motor control, power supplies, and automotive systems.

Applications:

  1. Motor control applications, such as brushless DC motor control and AC motor control.
  2. Power supplies, such as switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Automotive systems, such as electric vehicle (EV) motor control and power management systems.
  4. Industrial control systems, such as robotics and automation equipment.
  5. Renewable energy systems, such as solar panel inverters and wind turbine power converters.

In summary, the STB140NF75T4 is a high-power MOSFET that offers high efficiency, fast switching, and robust protection features. It is suitable for use in a wide range of high-power applications, including motor control, power supplies, and automotive systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB140NF75T4 Documents

Download datasheets and manufacturer documentation for STB140NF75T4

Ersa Product Change Notification 2024-03-05 (PDF)       D2PAK Leads (Pins) Modification (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)      

Shopping Guide

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