The STP45NF06 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage of 60V and a continuous drain current of 38A at 25°C, this device is well-suited for applications such as motor control, power supplies, and industrial electronics.
STP45NF06 Features
Technology: Advanced MOSFET (Metal Oxide) technology for high efficiency and reliability.
Low On-Resistance: Maximum Rds(on) of 28mOhm at 19A and 10V, ensuring minimal power loss.
High Input Capacitance: Maximum Ciss of 980 pF at 25V, reducing switching losses and improving performance.
Gate Charge: Maximum Qg of 58 nC at 10V, enabling fast switching speeds.
Robust Voltage Ratings: Maximum Vgs of ±20V and Vdss of 60V for reliable operation in high-voltage environments.
Thermal Performance: Power dissipation up to 80W (Tc) and operating temperature up to 175°C (TJ), making it suitable for high-power applications.
Mounting Type: Through-hole mounting in a TO220AB package, providing easy integration into existing designs.
Compliance: REACH Unaffected, ROHS3 Compliant, and Moisture Sensitivity Level 1, ensuring environmental and regulatory compliance.
STP45NF06 Applications
The STP45NF06 is ideal for a wide range of applications where high power handling, low on-resistance, and robust voltage ratings are critical:
Motor Control: Efficiently drives high-power motors in industrial and automotive applications.
Power Supplies: Provides high-efficiency power conversion in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Industrial Electronics: Reliable operation in harsh environments with high power dissipation and temperature requirements.
Automotive: Used in various automotive systems, such as electric power steering (EPS) and battery management systems.
Conclusion of STP45NF06
The STP45NF06 from STMicroelectronics offers a powerful combination of high voltage, low on-resistance, and robust thermal performance, making it an excellent choice for demanding high-power applications. Its advanced MOSFET technology, compliance with environmental and regulatory standards, and versatile mounting options make it a preferred choice for engineers designing cutting-edge electronic systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP45NF06 Documents
Download datasheets and manufacturer documentation for STP45NF06
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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