The STB140NF55T4 from STMicroelectronics is a high-performance N-channel power MOSFET designed for demanding applications requiring efficient power management. Part of the STripFET™ II series, this device offers a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 80A (Tc), making it suitable for high-current switching applications. Packaged in a D2PAK (TO-263) surface-mount form factor, it combines robust thermal performance with compact design. The MOSFET features a low on-resistance (Rds On) of 8mOhm at 10V gate drive, minimizing conduction losses and improving efficiency. With a gate charge (Qg) of 142nC and an input capacitance (Ciss) of 5300pF, it ensures fast switching speeds while maintaining stability.
This MOSFET is ideal for:
The STB140NF55T4 stands out as a high-efficiency, high-current MOSFET with superior thermal and electrical characteristics. Its low Rds On, fast switching, and robust packaging make it a preferred choice for power electronics designers. Whether used in automotive, industrial, or consumer applications, this device delivers reliable performance while adhering to stringent environmental standards. For engineers seeking a balance of power handling and efficiency, the STB140NF55T4 is a compelling solution.
Download datasheets and manufacturer documentation for STB140NF55T4