STMicroelectronics_STB140NF55T4

STMicroelectronics
STB140NF55T4  
Single FETs, MOSFETs

STMicroelectronics
STB140NF55T4
278-STB140NF55T4
MOSFET N-CH 55V 80A D2PAK
In Stock : 1991

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STB140NF55T4 Description

STB140NF55T4 Description

The STB140NF55T4 from STMicroelectronics is a high-performance N-channel power MOSFET designed for demanding applications requiring efficient power management. Part of the STripFET™ II series, this device offers a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 80A (Tc), making it suitable for high-current switching applications. Packaged in a D2PAK (TO-263) surface-mount form factor, it combines robust thermal performance with compact design. The MOSFET features a low on-resistance (Rds On) of 8mOhm at 10V gate drive, minimizing conduction losses and improving efficiency. With a gate charge (Qg) of 142nC and an input capacitance (Ciss) of 5300pF, it ensures fast switching speeds while maintaining stability.

STB140NF55T4 Features

  • Low Rds On: 8mOhm @ 40A, 10V reduces power dissipation and enhances efficiency.
  • High Current Handling: 80A continuous drain current (Tc) for robust performance in high-power circuits.
  • Fast Switching: Optimized gate charge (142nC) and capacitance for improved switching efficiency.
  • Thermal Performance: 300W power dissipation (Tc) ensures reliability under high-load conditions.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive compatibility.
  • RoHS3 & REACH Compliant: Meets environmental and safety standards for global use.
  • D2PAK Package: Surface-mount design with excellent thermal conductivity for PCB integration.

STB140NF55T4 Applications

This MOSFET is ideal for:

  • DC-DC Converters: Efficient power conversion in industrial and automotive systems.
  • Motor Control: High-current driving in robotics, drones, and industrial automation.
  • Power Supplies: Switching regulators and SMPS designs requiring low-loss operation.
  • Battery Management: Protection circuits and load switches in energy storage systems.
  • LED Drivers: High-efficiency lighting solutions with precise current control.

Conclusion of STB140NF55T4

The STB140NF55T4 stands out as a high-efficiency, high-current MOSFET with superior thermal and electrical characteristics. Its low Rds On, fast switching, and robust packaging make it a preferred choice for power electronics designers. Whether used in automotive, industrial, or consumer applications, this device delivers reliable performance while adhering to stringent environmental standards. For engineers seeking a balance of power handling and efficiency, the STB140NF55T4 is a compelling solution.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB140NF55T4 Documents

Download datasheets and manufacturer documentation for STB140NF55T4

Ersa STB140NF55(-1), STP140NF55      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB140NF55 View All Specifications      
Ersa STB140NF55(-1), STP140NF55      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service