STMicroelectronics_STP60NF10

STMicroelectronics
STP60NF10  
Single FETs, MOSFETs

STMicroelectronics
STP60NF10
278-STP60NF10
MOSFET N-CH 100V 80A TO220AB
In Stock : 2347

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STP60NF10 Description

STP60NF10 Description

The STP60NF10 from STMicroelectronics is an N-channel 100V, 80A power MOSFET housed in a TO-220AB package, designed for high-efficiency power switching applications. As part of the STripFET™ II series, it leverages advanced MOSFET (Metal Oxide) technology to deliver superior performance in demanding environments. With a low on-resistance (Rds(on)) of 23mOhm at 40A, 10V, this device minimizes conduction losses, making it ideal for high-current applications. Its robust 300W (Tc) power dissipation capability ensures reliable operation under heavy loads. The STP60NF10 is RoHS3 compliant, REACH unaffected, and rated MSL 1 (Unlimited), ensuring environmental and handling compliance.

STP60NF10 Features

  • High Voltage & Current Rating: 100V Vdss and 80A continuous drain current (Id) at 25°C (Tc).
  • Low Rds(on): 23mOhm @ 40A, 10V, reducing power losses and improving efficiency.
  • Fast Switching: Optimized gate charge (Qg) of 104nC @ 10V and input capacitance (Ciss) of 4270pF @ 25V for efficient high-frequency operation.
  • Wide Gate-Source Voltage Range: ±20V Vgs(max) for flexible drive compatibility.
  • Thermal Performance: 300W max power dissipation (Tc) ensures stability in high-power designs.
  • Reliability: STripFET™ II technology enhances ruggedness and thermal management.

STP60NF10 Applications

The STP60NF10 excels in:

  • Switching Power Supplies: High-efficiency DC-DC converters and SMPS designs.
  • Motor Control: Brushed/brushless motor drivers in industrial and automotive systems.
  • Inverters & UPS: Uninterruptible power supplies and solar inverters requiring low conduction losses.
  • Automotive Electronics: High-current applications like LED drivers and battery management.
  • Industrial Equipment: Robust performance in welding machines and power tools.

Conclusion of STP60NF10

The STP60NF10 stands out as a high-performance 100V N-channel MOSFET, combining low Rds(on), high current handling, and excellent thermal characteristics. Its STripFET™ II technology ensures reliability in demanding applications, from power conversion to motor control. With RoHS3 compliance and industry-standard TO-220AB packaging, it is a versatile choice for engineers seeking efficiency, durability, and compliance in power electronics designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP60NF10 Documents

Download datasheets and manufacturer documentation for STP60NF10

Ersa STB60NF10(-1), STP60NF10      
Ersa STP60NF10 View All Specifications      
Ersa STB60NF10(-1), STP60NF10      

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