STB34NM60ND is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.
Description:
The STB34NM60ND is an N-channel MOSFET with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 34A. It is available in a TO-220 package, which is suitable for a wide range of power applications.
Features:
High-power handling capability: The STB34NM60ND can handle high power levels, making it suitable for use in demanding applications.
Low on-state resistance (RDS(on)): The MOSFET has a low on-state resistance, which helps to minimize power losses and improve efficiency.
High switching speed: The STB34NM60ND can switch on and off quickly, making it suitable for high-frequency applications.
Robust design: The MOSFET is designed to withstand high voltage and current transients, ensuring reliable operation in harsh environments.
Applications:
Power electronics: The STB34NM60ND can be used in power converters, such as AC/DC and DC/DC converters, for efficient power management.
Motor control: The MOSFET is suitable for use in motor control applications, such as in industrial automation and robotics, due to its high power handling capability and fast switching speed.
Automotive systems: The STB34NM60ND can be used in various automotive applications, such as electric power steering, air conditioning systems, and battery management systems.
Renewable energy systems: The MOSFET can be used in solar power inverters and wind turbine converters, where high efficiency and reliability are crucial.
In summary, the STB34NM60ND is a high-power MOSFET that offers excellent performance in a wide range of applications, including power electronics, motor control, and automotive systems. Its robust design, low on-state resistance, and high switching speed make it a reliable choice for demanding power management applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Transistor Type
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance
STB34NM60ND Documents
Download datasheets and manufacturer documentation for STB34NM60ND
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Shipping Rate
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