STMicroelectronics_STW23NM60ND

STMicroelectronics
STW23NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STW23NM60ND
278-STW23NM60ND
MOSFET N-CH 600V 19.5A TO247-3
In Stock : 4955

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STW23NM60ND Description

STW23NM60ND Description

The STW23NM60ND from STMicroelectronics is a 600V N-channel MOSFET belonging to the FDmesh™ II series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 19.5A (at Tc = 25°C) and a low on-resistance (Rds(on)) of 180mΩ (at 10A, 10V), this device minimizes conduction losses, making it suitable for high-power designs. The TO-247-3 package ensures robust thermal performance, supporting a maximum power dissipation of 150W (Tc) and an operating junction temperature (Tj) of 150°C.

STW23NM60ND Features

  • High Voltage Rating: 600V Vdss for industrial and automotive applications.
  • Low Gate Charge (Qg): 70nC (at 10V) reduces switching losses, improving efficiency in high-frequency circuits.
  • Optimized Switching Performance: Input capacitance (Ciss) of 2050pF (at 50V) ensures fast turn-on/off transitions.
  • Robust Gate Drive: Vgs(max) of ±25V enhances noise immunity in harsh environments.
  • Advanced FDmesh™ II Technology: Delivers superior Rds(on) vs. gate charge trade-off, outperforming standard MOSFETs.
  • Reliability Compliance: ROHS3, REACH unaffected, and ECCN EAR99 certified for global use.

STW23NM60ND Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Efficient control in industrial motor systems and HVAC applications.
  • Renewable Energy Systems: Solar inverters and battery management due to high voltage tolerance.
  • Automotive Electronics: On-board chargers (OBC) and DC-DC modules requiring rugged performance.
  • Industrial Power Tools: High-current switching with minimal thermal stress.

Conclusion of STW23NM60ND

The STW23NM60ND combines high voltage capability, low Rds(on), and fast switching—making it ideal for demanding power electronics. While obsolete, its FDmesh™ II technology legacy ensures reliability in existing designs. Engineers should consider modern alternatives from STMicroelectronics for new projects, but this MOSFET remains a proven choice for high-efficiency, high-power applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STW23NM60ND Documents

Download datasheets and manufacturer documentation for STW23NM60ND

Ersa STx23NM60ND      
Ersa Power MOSFET Transistors 29/Jul/2013      

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