STMicroelectronics_STP18NM60ND
original

STMicroelectronics
STP18NM60ND

278-STP18NM60ND
PDF Datasheet
600V N-CH MOSFET, 13A, 290mR RdsOn, TO-220

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
290mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
25V
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STP18NM60ND Description

N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220

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