STMicroelectronics_STB36NM60ND
original

STMicroelectronics
STB36NM60ND

278-STB36NM60ND
PDF Datasheet
600V N-CH MOSFET, 29A, 110mR, D2PAK, Fast Diode

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
29A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
110mR
Fall Time
61.8ns
Gate to Source Voltage (Vgs)
25V
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STB36NM60ND Description

STB36NM60ND Description

The STB36NM60ND is a high-performance MOSFET N-CH 600V 29A D2PAK from STMicroelectronics. This single FET is designed for automotive applications and offers superior performance in demanding electronic systems. With its advanced technology and unique features, the STB36NM60ND stands out as a reliable choice for various applications.

STB36NM60ND Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent switching performance and high efficiency.
  • Drain to Source Voltage (Vdss): 600V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V - Offers low on-resistance for minimal power loss.
  • Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V - Ensures fast switching and reduced power consumption.
  • Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V - Minimizes parasitic effects for improved performance.
  • Operating Temperature: 150°C (TJ) - Designed for high-temperature environments.
  • Mounting Type: Surface Mount - Ideal for compact and space-constrained applications.
  • RoHS Status: ROHS3 Compliant - Ensures environmental sustainability.
  • REACH Status: REACH Unaffected - Compliant with European chemical regulations.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for various manufacturing processes.

STB36NM60ND Applications

The STB36NM60ND is ideal for a wide range of applications, including:

  1. Automotive Systems: Due to its automotive grade and high-temperature operation, it is perfect for automotive power electronics, such as electric vehicle chargers, inverters, and DC-DC converters.
  2. Industrial Control: Its high voltage and current ratings make it suitable for motor drives, power supplies, and other industrial control applications.
  3. Renewable Energy: The STB36NM60ND can be used in solar inverters and wind turbine power electronics, where high efficiency and reliability are crucial.
  4. Power Management: Its low on-resistance and fast switching capabilities make it ideal for power management systems in various electronic devices.

Conclusion of STB36NM60ND

The STB36NM60ND from STMicroelectronics is a high-performance MOSFET designed for demanding automotive and industrial applications. Its advanced technology, unique features, and superior performance make it an excellent choice for high-voltage, high-current, and high-temperature environments. Despite being classified as obsolete, the STB36NM60ND remains a reliable option for applications where its specific characteristics are required.

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