STMicroelectronics_STP21NM60ND

STMicroelectronics
STP21NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STP21NM60ND
278-STP21NM60ND
MOSFET N-CH 600V 17A TO220AB
In Stock : 15020

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STP21NM60ND Description

STP21NM60ND Description

The STP21NM60ND from STMicroelectronics is an N-channel 600V power MOSFET designed for high-efficiency switching applications. Part of the FDmesh™ II series, it features advanced technology to minimize conduction and switching losses, making it ideal for power conversion systems. With a continuous drain current (Id) of 17A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 220mΩ at 10V gate drive, it ensures high current handling with reduced power dissipation. The device operates within a wide temperature range of up to 150°C (TJ) and is housed in a TO-220AB package for robust thermal performance.

STP21NM60ND Features

  • High Voltage Rating: 600V Vdss for demanding industrial and automotive applications.
  • Low Gate Charge (Qg): 60nC at 10V, enabling fast switching and reduced drive losses.
  • Optimized Rds(on): 220mΩ at 8.5A, 10V, improving efficiency in high-current circuits.
  • Enhanced Thermal Performance: 140W max power dissipation (Tc) for reliable operation under load.
  • Robust Gate Drive: ±25V Vgs(max) tolerance for flexibility in drive circuitry.
  • Reliability Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity.

STP21NM60ND Applications

This MOSFET excels in high-voltage, high-frequency applications such as:

  • Switch-mode power supplies (SMPS) and inverters.
  • Motor control systems in industrial automation.
  • Solar inverters and renewable energy systems.
  • Electronic ballasts and welding equipment.
  • Automotive DC-DC converters and battery management.

Conclusion of STP21NM60ND

The STP21NM60ND combines high voltage capability, low conduction losses, and fast switching performance, making it a strong choice for power electronics designers. While marked as obsolete, its FDmesh™ II technology ensures superior performance in existing designs. Its balance of efficiency, thermal management, and ruggedness makes it suitable for industrial, automotive, and energy applications where reliability is critical. Engineers should verify replacement options but can leverage its proven performance in legacy systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Supplier Temperature Grade
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

STP21NM60ND Documents

Download datasheets and manufacturer documentation for STP21NM60ND

Ersa STB11NK40Z View All Specifications      
Ersa Mult Dev EOL 17/Oct/2018      

Shopping Guide

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