The STP21NM60ND from STMicroelectronics is an N-channel 600V power MOSFET designed for high-efficiency switching applications. Part of the FDmesh™ II series, it features advanced technology to minimize conduction and switching losses, making it ideal for power conversion systems. With a continuous drain current (Id) of 17A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 220mΩ at 10V gate drive, it ensures high current handling with reduced power dissipation. The device operates within a wide temperature range of up to 150°C (TJ) and is housed in a TO-220AB package for robust thermal performance.
This MOSFET excels in high-voltage, high-frequency applications such as:
The STP21NM60ND combines high voltage capability, low conduction losses, and fast switching performance, making it a strong choice for power electronics designers. While marked as obsolete, its FDmesh™ II technology ensures superior performance in existing designs. Its balance of efficiency, thermal management, and ruggedness makes it suitable for industrial, automotive, and energy applications where reliability is critical. Engineers should verify replacement options but can leverage its proven performance in legacy systems.
Download datasheets and manufacturer documentation for STP21NM60ND