STMicroelectronics_STF13NM60ND

STMicroelectronics
STF13NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STF13NM60ND
278-STF13NM60ND
Ersa
STMicroelectronics-STF13NM60ND-datasheets-8747034.pdf
MOSFET N-CH 600V 11A TO220FP
In Stock : 836

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STF13NM60ND Description

STF13NM60ND Description

The STF13NM60ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage of 600V and continuous drain current of 11A at 25°C, this device offers excellent performance in demanding power management applications.

STF13NM60ND Features

  • High Voltage and Current Handling: STF13NM60ND can handle a drain-to-source voltage of 600V and a continuous drain current of 11A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device has a maximum on-resistance of 380mOhm at 5.5A drain current and 10V gate-source voltage, contributing to high efficiency in power conversion.
  • Low Gate Charge: With a maximum gate charge of 24.5nC at 10V gate-source voltage, STF13NM60ND reduces switching losses and improves overall efficiency.
  • Robust Temperature Performance: Operating temperature range of -55°C to 150°C (TJ) ensures reliable performance in a wide range of environments.
  • Compliance and Certifications: The device is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious applications.
  • Package Type: Available in a through-hole TO220FP package, facilitating easy integration into existing designs.

STF13NM60ND Applications

The STF13NM60ND is ideal for a variety of high-power applications, including:

  • Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, particularly in applications requiring high efficiency and reliability.
  • Motor Control: The low on-resistance and low gate charge of STF13NM60ND make it an excellent choice for motor control applications, where high efficiency and fast switching are critical.
  • Industrial Automation: The device's robust temperature performance and high power handling capabilities make it suitable for use in industrial automation systems, where reliability and performance are paramount.

Conclusion of STF13NM60ND

The STF13NM60ND from STMicroelectronics is a high-performance N-Channel MOSFET that offers excellent voltage and current handling capabilities, making it an ideal choice for a variety of high-power applications. Its low on-resistance, low gate charge, and robust temperature performance contribute to high efficiency and reliability, while its compliance with RoHS3 and REACH standards make it suitable for environmentally conscious designs. With its high-performance characteristics and wide range of applications, the STF13NM60ND is a valuable addition to any power management or motor control design.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF13NM60ND Documents

Download datasheets and manufacturer documentation for STF13NM60ND

Ersa STx13NM60ND      
Ersa Box Label Chg 28/Jul/2016      

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