STMicroelectronics_STD13NM60N

STMicroelectronics
STD13NM60N  
Single FETs, MOSFETs

STMicroelectronics
STD13NM60N
278-STD13NM60N
Ersa
STMicroelectronics-STD13NM60N-datasheets-7062923.pdf
MOSFET N-CH 600V 11A DPAK
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    STD13NM60N Description

    The STD13NM60N is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

    Description:

    The STD13NM60N is an N-channel MOSFET with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 90A. It features a low on-state resistance (Rds(on)) of 0.06 Ohms, which helps to minimize power dissipation and improve efficiency in switching applications.

    Features:

    1. High blocking voltage: The STD13NM60N can handle high voltages up to 600V, making it suitable for use in high-voltage applications.
    2. High current capability: The device can handle continuous drain currents up to 90A, making it suitable for high-power applications.
    3. Low on-state resistance: The low Rds(on) of 0.06 Ohms helps to minimize power dissipation and improve efficiency in switching applications.
    4. Fast switching: The device has a low input capacitance and a high switching speed, making it suitable for use in high-frequency applications.
    5. Robustness: The STD13NM60N features a robust design with built-in protection against overvoltage, overcurrent, and overtemperature conditions.

    Applications:

    1. Motor control: The STD13NM60N is commonly used in motor control applications, such as industrial motor drives and automotive traction inverters.
    2. Power supplies: The device can be used in power supply applications, including switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Automotive systems: The STD13NM60N is suitable for use in various automotive applications, such as electric vehicle (EV) charging systems and power steering systems.
    4. Renewable energy systems: The device can be used in renewable energy systems, such as solar panel inverters and wind turbine converters.
    5. Industrial control: The STD13NM60N is also used in industrial control applications, such as robotics and conveyor systems.

    In summary, the STD13NM60N is a high-power, high-voltage MOSFET designed for use in a variety of power electronic applications. Its features, such as high blocking voltage, high current capability, low on-state resistance, and fast switching, make it suitable for use in motor control, power supplies, automotive systems, renewable energy systems, and industrial control applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD13NM60N Documents

    Download datasheets and manufacturer documentation for STD13NM60N

    Ersa ST(B,D)13NM60N Datasheet      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STD13NM60N View All Specifications      
    Ersa New Lead Frame Design 17/Mar/2023      

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