STMicroelectronics
STW34NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STW34NM60ND
278-STW34NM60ND
Ersa
STMicroelectronics-STW34NM60ND-datasheets-3813158.pdf
MOSFET N-CH 600V 29A TO247
In Stock : 2580

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STW34NM60ND Description

STW34NM60ND Description

The STW34NM60ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. This device features a robust 600V drain-to-source voltage rating and can handle continuous drain currents up to 29A at 25°C. With a low on-resistance of 110mOhm at 14.5A and 10V gate-source voltage, the STW34NM60ND offers efficient power management and reduced power losses.

STW34NM60ND Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of withstanding high voltages, making it suitable for applications such as motor drives and power supplies.
  • 29A Continuous Drain Current (Id) @ 25°C: High current capability for efficient power delivery in various electronic systems.
  • Low On-Resistance (Rds On): At 110mOhm, it minimizes power dissipation and improves efficiency.
  • Robust Gate Charge (Qg): With a maximum of 80.4nC at 10V, it ensures fast switching and reduced switching losses.
  • Wide Gate Voltage Range (Vgs): ±25V allows for compatibility with various gate drive circuits.
  • Compliance with Industry Standards: ROHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • Moisture Sensitivity Level (MSL) 1: Suitable for use in a wide range of environments without special handling requirements.

STW34NM60ND Applications

The STW34NM60ND is ideal for applications where high voltage and current handling are critical, such as:

  • Industrial Motor Controls: Due to its high voltage and current ratings, it is well-suited for motor drive applications.
  • Power Supplies: Its high voltage and low on-resistance make it an excellent choice for power supply designs.
  • Automotive Electronics: Reliable operation at high temperatures and compliance with automotive standards make it suitable for automotive applications.
  • Renewable Energy Systems: Its robustness and high voltage capabilities make it suitable for solar inverters and wind power systems.

Conclusion of STW34NM60ND

The STW34NM60ND from STMicroelectronics stands out for its high voltage and current handling capabilities, making it an excellent choice for demanding applications in various industries. Its low on-resistance, fast switching characteristics, and compliance with environmental standards further enhance its appeal. With its performance benefits and versatile applications, the STW34NM60ND is a reliable and efficient solution for high-power electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Transistor Type
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STW34NM60ND Documents

Download datasheets and manufacturer documentation for STW34NM60ND

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STx34NM60ND      

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