The STL28N60DM2 from STMicroelectronics is a high-performance N-channel 600V MOSFET utilizing advanced MDmesh™ technology, optimized for efficiency in power conversion applications. With a drain-to-source voltage (Vdss) of 600V and continuous drain current (Id) of 21A (Tc), it delivers robust power handling in a compact PowerFlat™ (8x8) HV surface-mount package. The device features a low on-resistance (Rds(on)) of 175mOhm at 10.5A, 10V, ensuring minimal conduction losses. Its gate charge (Qg) of 34nC and input capacitance (Ciss) of 1500pF contribute to fast switching performance, making it ideal for high-frequency designs.
The STL28N60DM2 stands out as a high-efficiency, high-voltage MOSFET tailored for modern power electronics. Its low Rds(on), fast switching, and compact PowerFlat™ package make it a superior choice for energy-conscious designs. Whether in SMPS, motor drives, or renewable energy systems, this device ensures reliable performance, thermal efficiency, and space savings, aligning with stringent industry standards. Its MDmesh™ technology further enhances switching dynamics, making it a preferred solution for next-generation power applications.
Download datasheets and manufacturer documentation for STL28N60DM2