STMicroelectronics_STB45N65M5

STMicroelectronics
STB45N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB45N65M5
278-STB45N65M5
Ersa
STMicroelectronics-STB45N65M5-datasheets-12093445.pdf
MOSFET N CH 650V 35A D2PAK
In Stock : 635

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STB45N65M5 Description

STB45N65M5 Description

The STB45N65M5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-source voltage rating of 650V and a continuous drain current of 35A at 25°C, this device is suitable for various power electronics applications. The STB45N65M5 is manufactured using advanced technology and is compliant with the latest industry standards, including RoHS3 and REACH.

STB45N65M5 Features

  • High Voltage and Current Handling: The STB45N65M5 can handle drain-source voltages up to 650V and continuous drain currents up to 35A at 25°C.
  • Low On-Resistance: The maximum on-resistance (Rds On) is 78mOhm at a drain current of 19.5A and a gate-source voltage of 10V, ensuring efficient power dissipation.
  • High Input Capacitance: The maximum input capacitance (Ciss) is 3375 pF at a drain-source voltage of 100V, allowing for fast switching and reduced power loss.
  • Low Gate Charge: The maximum gate charge (Qg) is 91 nC at a gate-source voltage of 10V, reducing the drive power requirements.
  • Robust Temperature Performance: The STB45N65M5 operates within a junction temperature range of -55°C to 150°C, making it suitable for various harsh environments.
  • Compliance with Industry Standards: The device is compliant with RoHS3 and REACH, ensuring environmental and health safety.

STB45N65M5 Applications

The STB45N65M5 is ideal for a wide range of applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STB45N65M5 is suitable for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  • Industrial Automation: The device's robust performance and temperature range make it suitable for use in industrial automation systems, including motor drives and control circuits.
  • Renewable Energy: The STB45N65M5 can be used in solar inverters and wind power systems, where high voltage and current handling capabilities are required.
  • Electric Vehicles: The device's high voltage and current ratings make it suitable for use in electric vehicle charging systems and power electronics.

Conclusion of STB45N65M5

The STB45N65M5 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronics applications. Its high voltage and current ratings, low on-resistance, and compliance with industry standards make it an ideal choice for power supplies, industrial automation, renewable energy, and electric vehicles. With its robust performance and temperature range, the STB45N65M5 offers a reliable and efficient solution for various high-power applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB45N65M5 Documents

Download datasheets and manufacturer documentation for STB45N65M5

Ersa STB,F,P45N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB45N65M5 View All Specifications      
Ersa STB,F,P45N65M5      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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