STMicroelectronics_STB18N65M5

STMicroelectronics
STB18N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB18N65M5
278-STB18N65M5
Ersa
STMicroelectronics-STB18N65M5-datasheets-807039.pdf
MOSFET N-CH 650V 15A D2PAK
In Stock : 1257

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STB18N65M5 Description

STB18N65M5 Description

The STB18N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ V technology, it offers an optimal balance of low on-resistance (220mΩ @ 10V, 7.5A) and high breakdown voltage (650V), making it ideal for high-efficiency switching circuits. With a continuous drain current (Id) of 15A (Tc) and a power dissipation capability of 110W (Tc), this device excels in high-power environments. Its low gate charge (31nC @ 10V) and input capacitance (1240pF @ 100V) ensure fast switching speeds, reducing switching losses in high-frequency applications. The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly processes.

STB18N65M5 Features

  • High Voltage & Current Handling: 650V Vdss and 15A Id for robust performance in power circuits.
  • Low Rds(on): 220mΩ @ 10V, 7.5A minimizes conduction losses, improving efficiency.
  • Fast Switching: Low Qg (31nC) and Ciss (1240pF) enable high-frequency operation.
  • Thermal Performance: 150°C max junction temperature (TJ) and 110W power dissipation ensure reliability under thermal stress.
  • Wide Gate Drive Range: ±25V Vgs(max) offers flexibility in drive circuit design.
  • Advanced Technology: MDmesh™ V provides superior switching performance and reduced EMI.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for global compatibility.

STB18N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages.
  • Motor Drives & Inverters: Efficient switching in industrial and automotive motor control.
  • Renewable Energy Systems: Solar inverters, wind power converters.
  • Industrial Power Systems: UPS, welding equipment, and high-power LED drivers.
  • Consumer Electronics: High-efficiency adapters and power supplies.

Conclusion of STB18N65M5

The STB18N65M5 stands out as a high-reliability 650V MOSFET with low Rds(on), fast switching, and excellent thermal performance, making it a top choice for power electronics designers. Its MDmesh™ V technology ensures superior efficiency in high-frequency applications, while its D2PAK package supports automated manufacturing. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET combines performance, durability, and compliance with global standards, offering a competitive edge in demanding power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB18N65M5 Documents

Download datasheets and manufacturer documentation for STB18N65M5

Ersa Product Change Notification 2024-03-05 (PDF)       D2PAK Leads (Pins) Modification (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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