The STB18N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ V technology, it offers an optimal balance of low on-resistance (220mΩ @ 10V, 7.5A) and high breakdown voltage (650V), making it ideal for high-efficiency switching circuits. With a continuous drain current (Id) of 15A (Tc) and a power dissipation capability of 110W (Tc), this device excels in high-power environments. Its low gate charge (31nC @ 10V) and input capacitance (1240pF @ 100V) ensure fast switching speeds, reducing switching losses in high-frequency applications. The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly processes.
The STB18N65M5 stands out as a high-reliability 650V MOSFET with low Rds(on), fast switching, and excellent thermal performance, making it a top choice for power electronics designers. Its MDmesh™ V technology ensures superior efficiency in high-frequency applications, while its D2PAK package supports automated manufacturing. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET combines performance, durability, and compliance with global standards, offering a competitive edge in demanding power applications.
Download datasheets and manufacturer documentation for STB18N65M5