STMicroelectronics_STB18N65M5
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STMicroelectronics
STB18N65M5

278-STB18N65M5
PDF Datasheet
650V 15A N-CH MOSFET D2PAK, 198mR RdsOn
26 Weeks

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
198mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
220mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
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STB18N65M5 Description

STB18N65M5 Description

The STB18N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ V technology, it offers an optimal balance of low on-resistance (220mΩ @ 10V, 7.5A) and high breakdown voltage (650V), making it ideal for high-efficiency switching circuits. With a continuous drain current (Id) of 15A (Tc) and a power dissipation capability of 110W (Tc), this device excels in high-power environments. Its low gate charge (31nC @ 10V) and input capacitance (1240pF @ 100V) ensure fast switching speeds, reducing switching losses in high-frequency applications. The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly processes.

STB18N65M5 Features

  • High Voltage & Current Handling: 650V Vdss and 15A Id for robust performance in power circuits.
  • Low Rds(on): 220mΩ @ 10V, 7.5A minimizes conduction losses, improving efficiency.
  • Fast Switching: Low Qg (31nC) and Ciss (1240pF) enable high-frequency operation.
  • Thermal Performance: 150°C max junction temperature (TJ) and 110W power dissipation ensure reliability under thermal stress.
  • Wide Gate Drive Range: ±25V Vgs(max) offers flexibility in drive circuit design.
  • Advanced Technology: MDmesh™ V provides superior switching performance and reduced EMI.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for global compatibility.

STB18N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages.
  • Motor Drives & Inverters: Efficient switching in industrial and automotive motor control.
  • Renewable Energy Systems: Solar inverters, wind power converters.
  • Industrial Power Systems: UPS, welding equipment, and high-power LED drivers.
  • Consumer Electronics: High-efficiency adapters and power supplies.

Conclusion of STB18N65M5

The STB18N65M5 stands out as a high-reliability 650V MOSFET with low Rds(on), fast switching, and excellent thermal performance, making it a top choice for power electronics designers. Its MDmesh™ V technology ensures superior efficiency in high-frequency applications, while its D2PAK package supports automated manufacturing. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET combines performance, durability, and compliance with global standards, offering a competitive edge in demanding power applications.

FAQ

What is STB18N65M5?
STB18N65M5 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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