STMicroelectronics
STH410N4F7-2AG  
Single FETs, MOSFETs

STMicroelectronics
STH410N4F7-2AG
278-STH410N4F7-2AG
Ersa
STMicroelectronics-STH410N4F7-2AG-datasheets-4184696.pdf
MOSFET N-CH 40V 200A H2PAK-2
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STH410N4F7-2AG Description

STH410N4F7-2AG Description

The STH410N4F7-2AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. It features a 40V drain-to-source voltage rating and a continuous drain current of 200A at 25°C. The device is housed in a H2PAK-2 package, making it suitable for surface mount applications. With a maximum power dissipation of 365W, the STH410N4F7-2AG is designed to handle high-power applications while maintaining efficiency and reliability.

STH410N4F7-2AG Features

  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance (Ciss): 11.5 pF @ 25V
  • Gate Charge (Qg): 141 nC @ 10V
  • Drain to Source Voltage (Vdss): 40V
  • Power Dissipation (Max): 365W (Tc)
  • Rds On (Max): 1.1mOhm @ 90A, 10V
  • Vgs(th) (Max): 4.5V @ 250µA
  • Series: STripFET™ F7
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting Type: Surface Mount
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Grade: Automotive

STH410N4F7-2AG Applications

The STH410N4F7-2AG is ideal for high-power automotive applications where efficiency and reliability are critical. Some specific use cases include:

  1. Battery Management Systems (BMS): The high current and voltage ratings make it suitable for managing high-capacity batteries in electric and hybrid vehicles.
  2. Inverters: The device's high power dissipation and low Rds On make it an excellent choice for inverter applications in electric vehicles.
  3. DC-DC Converters: The STH410N4F7-2AG can be used in high-efficiency DC-DC converters for automotive systems, such as infotainment and lighting.
  4. Motor Control: The device's high current and voltage ratings make it suitable for controlling high-power motors in automotive applications, such as electric power steering and air conditioning compressors.

Conclusion of STH410N4F7-2AG

The STH410N4F7-2AG is a high-performance N-Channel MOSFET designed for demanding automotive applications. Its unique combination of high current and voltage ratings, low Rds On, and high power dissipation make it an ideal choice for high-power automotive systems. With its automotive-grade reliability and compliance with REACH and RoHS regulations, the STH410N4F7-2AG is a trusted solution for the most demanding automotive applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Development Kit
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STH410N4F7-2AG Documents

Download datasheets and manufacturer documentation for STH410N4F7-2AG

Ersa STH410N4F7-2AG, STH410N4F7-6AG      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STH410N4F7-2AG, STH410N4F7-6AG      
Ersa StripFET Datasheet Update 8/Apr/2019      

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