STMicroelectronics_STP170N8F7

STMicroelectronics
STP170N8F7  
Single FETs, MOSFETs

STMicroelectronics
STP170N8F7
278-STP170N8F7
Ersa
STMicroelectronics-STP170N8F7-datasheets-2870527.pdf
MOSFET N-CH 80V 120A TO220
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STP170N8F7 Description

STP170N8F7 Description

The STP170N8F7 from STMicroelectronics is an N-channel 80V, 120A power MOSFET housed in a TO-220 package, designed for high-efficiency power switching applications. Part of the STripFET™ F7 series, it leverages advanced Metal Oxide Semiconductor (MOSFET) technology to deliver low on-resistance (3.9mΩ @ 60A, 10V) and high current-handling capability. With a 250W (Tc) maximum power dissipation and a ±20V gate-source voltage rating, this device is optimized for robust performance in demanding environments. Although marked as Obsolete, it remains a reliable choice for legacy designs due to its ROHS3 compliance and REACH unaffected status.

STP170N8F7 Features

  • Low Rds(On): 3.9mΩ minimizes conduction losses, enhancing efficiency in high-current applications.
  • High Current Rating: 120A (Tc) continuous drain current supports heavy-load conditions.
  • Fast Switching: Low gate charge (120nC @ 10V) and input capacitance (8710pF @ 40V) ensure rapid switching transitions.
  • Thermal Performance: TO-220 package with 250W (Tc) dissipation capability for effective heat management.
  • Wide Vgs Range: ±20V gate drive tolerance provides flexibility in drive circuit design.
  • Reliability: MSL 1 (Unlimited) moisture sensitivity and EAR99 ECCN classification for broad industrial use.

STP170N8F7 Applications

Ideal for:

  • DC-DC Converters: Low Rds(On) and high current capability optimize power conversion efficiency.
  • Motor Drives: Robust performance in H-bridge and inverter configurations for industrial motors.
  • Power Supplies: Suitable for SMPS and UPS systems requiring high switching efficiency.
  • Automotive Systems: Legacy designs in battery management and load switching (though newer alternatives may be preferred).
  • Industrial Switching: High-reliability applications like solenoid drivers and relay replacements.

Conclusion of STP170N8F7

The STP170N8F7 excels in high-power, high-efficiency applications with its low on-resistance, high current capacity, and thermal resilience. While obsolete, its STripFET™ F7 technology ensures it remains competitive in legacy systems. Engineers valuing low conduction losses and fast switching in TO-220 packages may still find it suitable for industrial, automotive, and power conversion designs. For new projects, consider STMicroelectronics' updated offerings with similar or improved specs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP170N8F7 Documents

Download datasheets and manufacturer documentation for STP170N8F7

Ersa STP170N8F7      

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