STMicroelectronics

STD8N65M5  

Single FETs, MOSFETs

STD8N65M5 Description

The STD8N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power management applications. With a 650V drain-to-source voltage (Vdss) and 7A continuous drain current (Id), it delivers robust performance in high-voltage circuits. Part of the MDmesh™ V series, it leverages advanced Metal Oxide Semiconductor (MOSFET) technology to achieve low conduction losses and high switching efficiency. Packaged in a DPAK (TO-252) surface-mount format, it is optimized for space-constrained designs while ensuring reliable thermal dissipation up to 150°C junction temperature (TJ).

STD8N65M5 Features

• Low On-Resistance: 600mΩ (max) @ 3.5A, 10V (Rds On), minimizing power losses.
• Fast Switching: Gate charge (Qg) of 15nC @ 10V and input capacitance (Ciss) of 690pF @ 100V ensure efficient high-frequency operation.
• High Voltage Tolerance: 650V Vdss with ±25V gate-source voltage (Vgs) capability for rugged applications.
• Thermal Efficiency: 70W power dissipation (Tc) and DPAK package enhance heat management.
• Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling robustness.
• Optimized Drive: 10V drive voltage for full enhancement, reducing switching losses.

STD8N65M5 Applications

Ideal for high-efficiency power systems, the STD8N65M5 excels in:

• Switch-mode power supplies (SMPS) and AC-DC converters (e.g., PFC stages).
• Motor drives and inverters requiring high-voltage blocking.
• Lighting solutions (LED drivers, ballasts).
• Industrial automation and renewable energy systems (solar inverters).
  Its low Qg and Ciss make it suitable for high-frequency designs, while the MDmesh™ V technology ensures superior performance over standard MOSFETs in terms of conduction and switching losses.

Conclusion of STD8N65M5

The STD8N65M5 combines high voltage capability, low Rds On, and excellent thermal performance in a compact DPAK package. Its MDmesh™ V architecture provides a competitive edge in efficiency-critical applications, making it a preferred choice for designers of power electronics, industrial systems, and energy-efficient solutions. With STMicroelectronics' proven reliability, this MOSFET is a robust solution for modern high-voltage challenges.

STD8N65M5 Documents

Download datasheets and manufacturer documentation for STD8N65M5

Datasheets :

STx8N65M5      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021       Reel Design Change 22/Aug/2022      

Other Related Documents :

STD8N65M5 View All Specifications      

HTML Datasheet :

STx8N65M5