STMicroelectronics_STL22N65M5

STMicroelectronics
STL22N65M5  
Single FETs, MOSFETs

STMicroelectronics
STL22N65M5
278-STL22N65M5
Ersa
STMicroelectronics-STL22N65M5-datasheets-6695160.pdf
MOSFET N-CH 650V 15A PWRFLAT HV
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STL22N65M5 Description

STL22N65M5 Description

The STL22N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 650V drain-to-source voltage (Vdss) and 15A continuous drain current (Id), it delivers robust performance in high-voltage circuits. The device utilizes MDmesh™ V technology, optimizing switching efficiency and reducing conduction losses. Packaged in a PowerFlat™ (8x8) HV surface-mount form factor, it offers excellent thermal management and space-saving benefits. Key parameters include a low on-resistance (Rds(on)) of 210mΩ at 10V Vgs and a gate charge (Qg) of 36nC, ensuring efficient switching in high-frequency applications.

STL22N65M5 Features

  • High Voltage & Current Rating: 650V Vdss and 15A Id (Tc) for robust power handling.
  • Low Conduction Losses: 210mΩ Rds(on) at 10V Vgs minimizes power dissipation.
  • Advanced MDmesh™ V Technology: Enhances switching performance and reduces EMI.
  • Optimized Gate Charge: 36nC Qg ensures fast switching and lower drive losses.
  • Thermal Efficiency: PowerFlat™ HV package improves heat dissipation, supporting 110W (Tc) power dissipation.
  • Wide Operating Temperature: Rated for 150°C junction temperature (TJ).
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL3 rated for industrial durability.

STL22N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency PFC, LLC, and flyback converters.
  • Motor Drives & Inverters: Ideal for industrial motor control and servo systems.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • LED Lighting Drivers: High-voltage LED ballasts and constant-current drivers.
  • Automotive & Industrial Power Modules: Suitable for high-reliability applications.

Conclusion of STL22N65M5

The STL22N65M5 stands out as a high-efficiency, high-voltage MOSFET tailored for modern power electronics. Its low Rds(on), fast switching capability, and compact PowerFlat™ package make it ideal for space-constrained, high-power designs. Whether in SMPS, motor drives, or renewable energy systems, this device combines performance, thermal resilience, and reliability—making it a superior choice for engineers seeking optimized power solutions.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Moisture Sensitive
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL22N65M5 Documents

Download datasheets and manufacturer documentation for STL22N65M5

Ersa IPD/15/9187 17/Apr/2015      
Ersa STL22N65M5      
Ersa Material Barrier Bag 17/Dec/2020      
Ersa STL22N65M5 View All Specifications      
Ersa STL22N65M5      
Ersa STLYYY 22/Dec/2020      

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