The STL22N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 650V drain-to-source voltage (Vdss) and 15A continuous drain current (Id), it delivers robust performance in high-voltage circuits. The device utilizes MDmesh™ V technology, optimizing switching efficiency and reducing conduction losses. Packaged in a PowerFlat™ (8x8) HV surface-mount form factor, it offers excellent thermal management and space-saving benefits. Key parameters include a low on-resistance (Rds(on)) of 210mΩ at 10V Vgs and a gate charge (Qg) of 36nC, ensuring efficient switching in high-frequency applications.
The STL22N65M5 stands out as a high-efficiency, high-voltage MOSFET tailored for modern power electronics. Its low Rds(on), fast switching capability, and compact PowerFlat™ package make it ideal for space-constrained, high-power designs. Whether in SMPS, motor drives, or renewable energy systems, this device combines performance, thermal resilience, and reliability—making it a superior choice for engineers seeking optimized power solutions.
Download datasheets and manufacturer documentation for STL22N65M5