STMicroelectronics_STD12N50DM2

STMicroelectronics
STD12N50DM2  
Single FETs, MOSFETs

STMicroelectronics
STD12N50DM2
278-STD12N50DM2
Ersa
STMicroelectronics-STD12N50DM2-datasheets-6580007.pdf
MOSFET N-CH 500V 11A DPAK
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STD12N50DM2 Description

STD12N50DM2 Description

The STD12N50DM2 is a high-performance, single N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by STMicroelectronics. This device is part of the MDmesh™ DM2 series and is offered in a DPAK package, making it suitable for surface mount applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at 25°C, the STD12N50DM2 is designed to handle high voltage and current requirements in various electronic systems.

STD12N50DM2 Features

  • High Voltage and Current Handling: The STD12N50DM2 can handle a drain-to-source voltage of up to 500V and a continuous drain current of 11A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device features a low on-resistance (Rds On) of 350mOhm at a drain current of 5.5A and a gate-source voltage of 10V, ensuring efficient power dissipation and reduced power loss.
  • High Input Capacitance: The STD12N50DM2 has a maximum input capacitance (Ciss) of 628 pF at a drain-source voltage of 100V, which helps in reducing the overall capacitance and improving the device's performance.
  • Low Gate Charge: The device has a maximum gate charge (Qg) of 16 nC at a gate-source voltage of 10V, which reduces the gate drive power and improves the overall efficiency of the system.
  • Compliance with Industry Standards: The STD12N50DM2 is compliant with the RoHS3 standard, making it an environmentally friendly choice for electronic designs. It also has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.

STD12N50DM2 Applications

The STD12N50DM2 is ideal for various high-power applications due to its high voltage and current handling capabilities, low on-resistance, and compliance with industry standards. Some specific use cases include:

  1. Power Supplies: The high voltage and current ratings make the STD12N50DM2 suitable for power supply designs, where efficient power conversion and low power loss are critical.
  2. Motor Control: The device's high voltage and current ratings, along with its low on-resistance, make it an excellent choice for motor control applications, where high efficiency and performance are required.
  3. Industrial Automation: The STD12N50DM2 can be used in industrial automation systems, where high voltage and current handling capabilities are necessary for controlling various mechanical components.

Conclusion of STD12N50DM2

The STD12N50DM2 is a high-performance, single N-Channel MOSFET from STMicroelectronics that offers a combination of high voltage and current handling capabilities, low on-resistance, and compliance with industry standards. Its unique features and advantages make it an ideal choice for various high-power applications, such as power supplies, motor control, and industrial automation systems. With its high input capacitance and low gate charge, the STD12N50DM2 ensures efficient power dissipation and reduced power loss, making it a reliable and cost-effective solution for demanding electronic designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Development Kit
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD12N50DM2 Documents

Download datasheets and manufacturer documentation for STD12N50DM2

Ersa Product Change Notification (PDF)      

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