STMicroelectronics

STW37N60DM2AG  

Single FETs, MOSFETs

STW37N60DM2AG Description

The STW37N60DM2AG from STMicroelectronics is a high-performance N-channel 600V power MOSFET designed for demanding automotive and industrial applications. Part of the MDmesh™ DM2 series, it leverages advanced Metal Oxide (MOSFET) technology to deliver low conduction losses, high switching efficiency, and robust thermal performance. With a continuous drain current (Id) of 28A (Tc) and a low on-resistance (Rds(on)) of 110mOhm @ 14A, 10V, this device ensures minimal power dissipation (210W max) while maintaining reliability in high-voltage environments. Its automotive-grade qualification ensures compliance with stringent industry standards, making it ideal for mission-critical systems.

STW37N60DM2AG Features

• High Voltage & Current Handling: 600V Vdss and 28A Id capability for power-intensive applications.
• Low Gate Charge (Qg): 54 nC @ 10V reduces switching losses, enhancing efficiency in high-frequency circuits.
• Optimized Switching Performance: Low input capacitance (Ciss) of 2400 pF @ 100V minimizes delay times.
• Robust Construction: TO-247 package ensures superior thermal management and mechanical durability.
• Automotive Compliance: AEC-Q101 qualified, ROHS3 compliant, and REACH unaffected, meeting rigorous environmental and safety standards.
• Wide Vgs Range: ±25V gate-source voltage tolerance for flexible drive circuitry design.

STW37N60DM2AG Applications

• Automotive Systems: Electric vehicle (EV) powertrains, onboard chargers, and DC-DC converters.
• Industrial Power Supplies: SMPS, UPS, and inverter designs requiring high efficiency and reliability.
• Renewable Energy: Solar inverters and wind turbine converters benefiting from low Rds(on) and high voltage tolerance.
• Motor Drives: High-current brushless DC (BLDC) motor controllers in industrial automation.
• Telecom Infrastructure: Power amplifiers and RF modules demanding stable high-voltage operation.

Conclusion of STW37N60DM2AG

The STW37N60DM2AG stands out as a high-efficiency, automotive-grade MOSFET tailored for high-power switching applications. Its MDmesh™ DM2 technology ensures superior performance in reducing conduction and switching losses, while its TO-247 package offers excellent thermal dissipation. Ideal for automotive, industrial, and renewable energy systems, this MOSFET combines ruggedness with precision, making it a top choice for engineers designing next-generation power electronics.

STW37N60DM2AG Documents

Download datasheets and manufacturer documentation for STW37N60DM2AG

PCN Assembly/Origin :

Wafer 15/Feb/2019      

Datasheets :

STW37N60DM2AG      

HTML Datasheet :

STW37N60DM2AG