STMicroelectronics_STP3N150

STMicroelectronics
STP3N150  
Single FETs, MOSFETs

STMicroelectronics
STP3N150
278-STP3N150
Ersa
STMicroelectronics-STP3N150-datasheets-1654714.pdf
MOSFET N-CH 1500V 2.5A TO220AB
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STP3N150 Description

STP3N150 is a Power MOSFET (N-channel, enhancement mode) manufactured by STMicroelectronics. Here is a brief description of the model, its features, and applications:

Description:

The STP3N150 is a high-power, high-voltage N-channel MOSFET designed for use in a wide range of applications. It is available in a TO-220AB package, which is suitable for both through-hole and surface-mount applications.

Features:

  1. N-channel, enhancement mode: The STP3N150 is an N-channel MOSFET, which means it uses an n-type semiconductor for the channel between the source and drain terminals. It operates in the enhancement mode, requiring a positive voltage at the gate terminal to turn on the device.
  2. High voltage and current ratings: The STP3N150 is designed to handle high voltage and current levels. It has a maximum drain-source voltage (VDS) of 1500V and a continuous drain current (ID) of 3.0A.
  3. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps reduce power dissipation and improve efficiency in switching applications.
  4. High switching speed: The STP3N150 is designed for fast switching applications, with a low gate charge and short switching times.
  5. Built-in protection features: The device includes built-in protection features such as overvoltage protection and thermal shutdown, which help ensure reliable operation and prevent damage in case of abnormal operating conditions.

Applications:

The STP3N150 is suitable for a wide range of applications that require high voltage and current handling capabilities. Some of the common applications include:

  1. Motor control: The STP3N150 can be used in motor control applications, such as in industrial machinery, appliances, and automotive systems.
  2. Power supplies: The device can be used in power supply circuits, including switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Battery protection: The STP3N150 can be used in battery protection circuits to prevent overvoltage and overcurrent conditions.
  4. Inverters: The MOSFET can be used in inverter circuits for converting DC input to AC output, such as in solar power systems and power inverters for electric vehicles.
  5. Switch mode power supplies (SMPS): The STP3N150 can be used in SMPS applications, where high efficiency and fast switching are required.

In summary, the STP3N150 is a high-power, high-voltage N-channel MOSFET that offers a combination of high voltage and current handling capabilities, low on-state resistance, and fast switching performance. It is suitable for a wide range of applications, including motor control, power supplies, battery protection, inverters, and switch mode power supplies.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP3N150 Documents

Download datasheets and manufacturer documentation for STP3N150

Ersa STx3N150      
Ersa STP3N150 View All Specifications      
Ersa STx3N150      

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